SiC645

www.vishay.com

Vishay Siliconix

S16-2233-Rev. B, 31-Oct-16

8

Document Number: 65424

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Notes

a. Compliance to datasheet limits is assured by one or more methods: production test, characterization and/or design.

b. These ratings vary with PCB layout and operating condition, and limited by SPS temperature and thermal shutdown trip point.

c. Limits apply across the operating temperature range.

TIMING DIAGRAM

Fig. 6 - Timing Diagram

CURRENT MONITOR

1.2

V

-

± 2

-

%

 10 A, T

-

± 3

-

 10 A, T

-

± 4

-

 10 A, T

-

± 5

-

Downslope blanking time

-160

-

ns

HFET over-current trip

-90-

A

1.2

V

TEMPERATURE MONITOR

Over-temperature rising threshold

-140

-

°C

Over-temperature falling threshold

-125

-

Over-temperature hysteresis

-15-

Temperature coefficient

-

8

-

mV/K

-

8

-

TMON voltage at 25 °C temperature

-

0.80

-

V

TMON high at over-temperature

2.5

FAULT PIN

Output low voltage

5 mA

-

0.18

0.26

V

Leakage current

-16-

nA

BOOTSTRAP DIODE

Forward voltage drop

5 mA

-

0.09

-

V

On-resistance

-16-



LGCTRL PIN

Rising threshold

Logic high, (normal: obeys PWM)

-

1.29

1.6

V

Falling threshold

Logic low, (forces GL low; left off)

1.01

-

MOSFETs

-3.6

-

m



-0.76

-

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

TYP.

PWM

GH

GL