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DG9409EDN-T1-GE4 Datasheet(PDF) 4 Page - Vishay Siliconix |
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DG9409EDN-T1-GE4 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 15 page DG9408E, DG9409E www.vishay.com Vishay Siliconix S16-1452-Rev. A, 25-Jul-16 4 Document Number: 75375 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SPECIFICATIONS (Dual Supply V+ = 5 V, V- = -5 V) PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED V+ = 5 V, V- = -5 V, ± 10 % VA, VEN = 0.8 V or 2 V f TEMP.b LIMITS -40 °C to +85 °C UNIT MIN. c TYP. d MAX. c Analog Switch Analog signal range e VANALOG Full -5 - 5 V On-Resistance RON V+ = 4.5 V, V- = -4.5 V, VD = ± 3.5 V, IS = 50 mA sequence each switch on Room - 4 8 Full - - 8.5 RON match between channels g R ON V+ = 4.5 V, V- = -4.5 V, VD = ± 3.5 V, IS = 50 mA Room - - 3.6 On-resistance flatness i RON Flatness Room - - 8.2 Switch off leakage current a IS(off) V+ = 5.5, V- = -5.5 V VEN = 2.4 V, VD = ± 4.5 V, VS = ± 4.5 V Room -2 - 2 nA Full -15 - 15 ID(off) Room -2 - 2 Full -15 - 15 Channel on leakage current a ID(on) V+ = 5.5 V, V- = -5.5 V VEN = 0 V, VD = ± 4.5 V, VS = ± 4.5 V Room -2 - 2 Full -15 - 15 Digital Control Logic high input voltage VINH Full 2 - - V Logic low input voltage VINL Full - - 0.8 Input current a IIN VAX = VEN = 2 V or 0.8 V Full -1 - 1 μA Dynamic Characteristics Transition time e tTRANS VS1 = 3.5 V, VS8 = -3.5 V, (DG9408E) VS1b = 3.5 V, VS4b = -3.5 V, (DG9409E) see fig. 2 Room - 47 65 ns Full - - 70 Break-before-make time e tBBM VS(all) = VDA = 3.5 V see fig. 4 Room 1 13 - Full --- Enable turn-on time e tON(EN) VAX = 0 V, VS1 = 3.5 V (DG9408E) VAX = 0 V, VS1b = 3.5 V (DG9409E) see fig. 3 Room - 54 70 Full - - 76 Enable turn-off time e tOFF(EN) Room - 28 40 Full - - 43 Source off capacitance e CS(off) f = 1 MHz, VS = 0 V, VEN = 2 V DG9408E Room - 15 - pF DG9409E Room - 14 - Drain off capacitance e CD(off) f = 1 MHz, VD = 0 V, VEN = 2 V DG9408E Room - 126 - DG9409E Room - 63 - Drain on capacitance e CD(on) f = 1 MHz, VD = 0 V, VEN = 0 V DG9408E Room - 153 - DG9409E Room - 89 - Power Supplies Power supply current I+ VEN = VA = 0 V or V+ Room - - 1 μA I- Room -1 - - |
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