IKW30N60DTP datasheet(6/16 Pages) INFINEON

Part #	IKW30N60DTP

Description	600V DuoPack IGBT and diode

Download	16 Pages

Scroll/Zoom	100%

Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

Logo

6 / 16 page

6

IKW30N60DTP

TRENCHSTOPTMP

erformanceSeries

Rev.2.1,2016-02-08

Diode reverse recovery time

trr

-

76

-

ns

Diode reverse recovery charge

Qrr

-

0.45

-

µC

Diode peak reverse recovery current

Irrm

-

10.2

-

A

Diode peak rate of fall of reverse

recoverycurrentduringtb

dirr/dt

-

150

-

A/µs

Tvj=25°C,

VR=400V,

IF=15.0A,

diF/dt=1160A/µs

SwitchingCharacteristic,InductiveLoad

Value

min.

typ.

max.

Parameter

Symbol Conditions

Unit

IGBTCharacteristic,atTvj=175°C

Turn-on delay time

td(on)

-

15

-

ns

Rise time

tr

-

23

-

ns

Turn-off delay time

td(off)

-

220

-

ns

Fall time

tf

-

59

-

ns

Turn-on energy

Eon

-

0.99

-

mJ

Turn-off energy

Eoff

-

0.74

-

mJ

Total switching energy

Ets

-

1.73

-

mJ

Tvj=175°C,

VCC=400V,IC=30.0A,

VGE=0.0/15.0V,

RG(on)=10.5

Ω,RG(off)=10.5Ω,

L

σ=32nH,Cσ=60pF

L

σ,CσfromFig.E

Energy losses include “tail” and

diode reverse recovery.

Diode reverse recovery time

trr

-

134

-

ns

Diode reverse recovery charge

Qrr

-

1.23

-

µC

Diode peak reverse recovery current

Irrm

-

16.6

-

A

Diode peak rate of fall of reverse

recoverycurrentduringtb

dirr/dt

-

135

-

A/µs

Tvj=175°C,

VR=400V,

IF=15.0A,

diF/dt=1160A/µs

Similar Part No. - IKW30N60DTP

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	IKW30N60H3	1Mb / 16P	High speed Duopack : IGBT in Trench and Fieldstop technology 2010-07-26 revision:1.2
	IKW30N60H3	2Mb / 16P	IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode Rev.2.2,2014-03-12
	IKW30N60H3	2Mb / 16P	IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode Rev.2.2,2014-03-12
	IKW30N60T	397Kb / 13P	Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Rev. 2.1 Dev-04
	IKW30N60T	506Kb / 13P	IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Rev. 2.6 19.05.2015

More results

Similar Description - IKW30N60DTP

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	IKW40N60DTP	1Mb / 16P	600V DuoPack IGBT and diode Rev.2.1,2016-02-08
	IKW50N60DTP	1Mb / 16P	600V DuoPack IGBT and diode TRENCHSTOPTM Performance series Rev.2.1,2016-02-08
	IGW40N60DTP	1Mb / 14P	600V DuoPack IGBT TRENCHSTOPTM Performance series Rev.2.1,2016-02-05
	IKZ50N65EH5	2Mb / 16P	650V DuoPack IGBT and diode High speed series fifth generation Rev.2.1,2014-10-31
	IKZ50N65NH5	2Mb / 16P	650V DuoPack IGBT and diode High speed series fifth generation Rev.2.1,2014-10-31
	IKW40N65F5	2Mb / 18P	650V DuoPack IGBT and Diode High speed switching series fifth generation Rev.1.2,2013-12-18
	IKP40N65H5	2Mb / 18P	650V DuoPack IGBT and diode High speed switching series fifth generation Rev.2.1,2015-05-06
	IKP15N65H5	2Mb / 17P	650V DuoPack IGBT and Diode High speed switching series fifth generation Rev.2.1,2015-05-05
	IKA15N65H5	2Mb / 17P	650V DuoPack IGBT and Diode High speed switching series fifth generation Rev.2.1,2015-05-05
	IKP08N65F5	2Mb / 17P	650V DuoPack IGBT and Diode High speed switching series fifth generation Rev.1.1,2012-11-09

More results

IKW30N60DTP Datasheet(PDF) 6 Page - Infineon Technologies AG

IKW30N60DTP Datasheet(HTML) 6 Page - Infineon Technologies AG

Similar Part No. - IKW30N60DTP

Similar Description - IKW30N60DTP

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Datasheet Download

Link URL