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IPP80R280P7 Datasheet(PDF) 4 Page - Infineon Technologies AG |
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IPP80R280P7 Datasheet(HTML) 4 Page - Infineon Technologies AG |
4 / 13 page 4 800VCoolMOSªP7PowerTransistor IPP80R280P7 Rev.2.0,2016-07-05 Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 800 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2.5 3 3.5 V VDS=VGS,ID=0.36mA Zero gate voltage drain current IDSS - - - 10 1 - µA VDS=800V,VGS=0V,Tj=25°C VDS=800V,VGS=0V,Tj=150°C Gate-source leakage curent incl. zener diode IGSS - - 1 µA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - - 0.24 0.62 0.28 - Ω VGS=10V,ID=7.2A,Tj=25°C VGS=10V,ID=7.2A,Tj=150°C Gate resistance RG - 1 - Ω f=250kHz,opendrain Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 1200 - pF VGS=0V,VDS=500V,f=250kHz Output capacitance Coss - 20 - pF VGS=0V,VDS=500V,f=250kHz Effective output capacitance, energy related 1) Co(er) - 38 - pF VGS=0V,VDS=0to500V Effective output capacitance, time related 2) Co(tr) - 490 - pF ID=constant,VGS=0V,VDS=0to500V Turn-on delay time td(on) - 10 - ns VDD=400V,VGS=13V,ID=7.2A, RG=4.7 Ω Rise time tr - 6 - ns VDD=400V,VGS=13V,ID=7.2A, RG=4.7 Ω Turn-off delay time td(off) - 40 - ns VDD=400V,VGS=13V,ID=7.2A, RG=4.7 Ω Fall time tf - 5 - ns VDD=400V,VGS=13V,ID=7.2A, RG=4.7 Ω Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 5 - nC VDD=640V,ID=7.2A,VGS=0to10V Gate to drain charge Qgd - 15 - nC VDD=640V,ID=7.2A,VGS=0to10V Gate charge total Qg - 36 - nC VDD=640V,ID=7.2A,VGS=0to10V Gate plateau voltage Vplateau - 4.5 - V VDD=640V,ID=7.2A,VGS=0to10V 1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to500V 2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to500V |
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