PTFB091507FHV1R250XTMA1 datasheet(10/13 Pages) INFINEON

Part #	PTFB091507FHV1R250XTMA1

Description	Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 ??960 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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10 / 13 page

PTFB091507FH

Data Sheet

10 of 13

Rev. 03.1, 2016-06-09

R803

RF_IN

C208

C201

C214

C216

C215

C102

C804 R801

R805

C803

S3

C805

C222

C221

C206

C205

C109

C202

C801

C105

C212

C106

C204

C211

C219

C108

R103

C101

C107

C210

C200

C203

C207

C218

C213

C217

C220

C110

R102

C104 C103

RF_OUT

PTFB091507_IN_01

R04350, .020

(62)

PTFB091507_IN_01

R04350, .020

(62)

VDD

S1

C802

b 091507 f h _C D_ 3- 08 - 11

C223

Reference circuit board layout (not to scale)

Component

Description

Suggested Supplier

P/N or Comment

C101

Chip capacitor, 33 pF

ATC

ATC100B330JW500XB

C102

Chip capacitor, 4.71 µF

Digi-Key

493-2372-2-ND

C103

Capacitor, 10 nF

ATC

ATC200B103MW50XC

C104, C107

Chip capacitor, 56 pF

ATC

ATC100B560JW500XB

C105

Chip capacitor, 3.3 pF

ATC

ATC100B3R3CW500XB

C106, C203

Chip capacitor, 3.9 pF

ATC

ATC100B3R9CW500XB

C108

Chip capacitor, 1.5 pF

ATC

ATC100B1R5CW500XB

C109

Capacitor, 10 nF

ATC

ATC200B103MW50XC

C110

Chip capacitor, 4.7 pF

ATC

ATC100B4R7CW500XB

C201, C213

Electrolytic cap., 100 uF, 50 V

Digi-Key

PCE4442TR-ND

C202

Chip capacitor, 1.2 pF

ATC

ATC100B1R2CW500XB

C204

Capacitor, 10 nF

ATC

ATC200B103MW50XC

C205

Chip capacitor, 56 pF

ATC

ATC100B560JW500XB

C206, C208, C211,

Capacitor, 10 µF

Digi-Key

587-1818-2-ND

C212, C217, C220,

C221, C222

C207

Chip capacitor, 0.2 pF

ATC

ATC100B0R2CW500XB

C209

Chip capacitor, 5.6 pF

ATC

ATC100B5R6CW500XB

C210

Chip capacitor, 1 pF

ATC

ATC100B1R0CW500XB

table continued on next page

Reference Circuit (cont.)

Similar Part No. - PTFB091507FHV1R250XTMA1

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	PTFB091507FH	1Mb / 13P	Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920-960 MHz Rev. 03, 2011-03-14
Cree, Inc	PTFB091507FH	618Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 ??960 MHz

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Similar Description - PTFB091507FHV1R250XTMA1

Manufacturer	Part #	Datasheet	Description
Cree, Inc	PTFB091507FH	618Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 ??960 MHz
Infineon Technologies A...	PTFB091507FH	1Mb / 13P	Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920-960 MHz Rev. 03, 2011-03-14
Infineon Technologies A...	PTFB091802FC	1Mb / 9P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 ??960 MHz Rev. 02.1, 2016-06-10
Cree, Inc	PTFB091802FC	538Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 ??960 MHz
Cree, Inc	PTFB093608FV	1Mb / 13P	Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 ??960 MHz
Infineon Technologies A...	PTFA091503EL	627Kb / 11P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 920-960 MHz Rev. 03, 2010-08-11
	PTFA091503EL	766Kb / 11P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 ??960 MHz Rev. 04, 2016-06-16
	PTFB090901EA	226Kb / 14P	Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 . 960 MHz Rev. 04, 2012-02-23
Cree, Inc	PTFB090901EA	710Kb / 14P	Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 ??960 MHz
WOLFSPEED, INC.	PTRA097008NB	556Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 630 W, 48 V, 920 – 960 MHz Rev. 04, 2023-06-22

More results

PTFB091507FHV1R250XTMA1 Datasheet(PDF) 10 Page - Infineon Technologies AG

PTFB091507FHV1R250XTMA1 Datasheet(HTML) 10 Page - Infineon Technologies AG

Similar Part No. - PTFB091507FHV1R250XTMA1

Similar Description - PTFB091507FHV1R250XTMA1

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