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PTFB183404FV2R0XTMA1 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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PTFB183404FV2R0XTMA1 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 18 page All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 18 Rev. 04.1, 2016-06-10 PTFB183404E PTFB183404F 0 5 10 15 20 25 30 35 -60 -55 -50 -45 -40 -35 -30 -25 36 38 40 42 44 46 48 50 52 Average Output Power (dBm) Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 2.6A, ƒ = 1880 MHz, 3GPP WCDMA, PAR = 8:1, 10 MHz carrier spacing, BW = 3.84 MHz Efficiency IMD Up IMD Low ACPR RF Characteristics Two-carrier WCDMA Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 2.6 A, POUT = 80 W average, ƒ1 = 1870 MHz, ƒ2 = 1880 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 16 17 — dB Drain Efficiency hD 24 25.5 — % Intermodulation Distortion IMD — –35 –32 dBc High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB183404E Package H-36275-8 Features • Broadbandinternalinputandoutputmatching • Widevideobandwidth • Typicalsingle-carrierWCDMAperformance, 1880 MHz, 30 V - Output power = 125 W - Efficiency = 31% - Gain = 17 dB - PAR = 5.5 dB @ 0.01% CCDF probability - ACPR @ 5 MHz = –37 dBc • Increasednegativegate-sourcevoltagerangefor improved performance in Doherty amplifiers • Capableofhandling10:1VSWR@30V,340W (CW) output power • IntegratedESDprotection • Excellentthermalstability • Pb-freeandRoHScompliant PTFB183404F Package H-37275-6/2 |
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