PTFB091507FHV1R250 datasheet(5/13 Pages) INFINEON

Part #	PTFB091507FHV1R250

Description	Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 ??960 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

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5 / 13 page

Data Sheet

5 of 13

Rev. 03.1, 2016-06-09

PTFB091507FH

30

45

60

-20

0

20

Single-carrier WCDMA Drive-up

920 MHz

VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz,

3GPP WCDMA signal,

PAR = 7.5:1, BW = 3.84 MHz

PAR*

Efficiency

0

15

30

45

60

-60

-40

-20

0

20

42

44

46

48

50

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

920 MHz

VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz,

3GPP WCDMA signal,

PAR = 7.5:1, BW = 3.84 MHz

ACPR

PAR*

Efficiency

Gain

30

45

60

-20

0

20

Single-carrier WCDMA Drive-up

940 MHz

VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz,

3GPP WCDMA signal,

PAR = 7.5:1, BW = 3.84 MHz

PAR*

Efficiency

0

15

-60

-40

42

44

46

48

50

Average Output Power (dBm)

ACPR

Gain

4

6

8

-20

0

20

Single-carrier WCDMA Drive-up

940 MHz

VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz,

3GPP WCDMA signal,

PAR = 7.5:1, BW = 3.84 MHz

PAR*

0

2

4

6

8

-60

-40

-20

0

20

42

44

46

48

50

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

940 MHz

VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz,

3GPP WCDMA signal,

PAR = 7.5:1, BW = 3.84 MHz

ACPR

PAR*

4

6

8

-20

0

20

Single-carrier WCDMA Drive-up

920 MHz

VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz,

3GPP WCDMA signal,

PAR = 7.5:1, BW = 3.84 MHz

PAR*

0

2

4

6

8

-60

-40

-20

0

20

42

44

46

48

50

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

920 MHz

VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz,

3GPP WCDMA signal,

PAR = 7.5:1, BW = 3.84 MHz

ACPR

PAR*

Typical Performance (cont.)

*Peak-to-average ratio (PAR) compression at 0.01% probability on CCDF curve

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PTFB091507FHV1R250 Datasheet(PDF) 5 Page - Infineon Technologies AG

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