PTFB183404FV2R250 datasheet(3/18 Pages) INFINEON

Part #	PTFB183404FV2R250

Description	High Power RF LDMOS Field Effect Transistors 340 W, 1805 ??1880 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

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PTFB183404E

PTFB183404F

Data Sheet

3 of 18

Rev. 04.1, 2016-06-10

-55

-50

-45

-40

-35

-30

-25

36

38

40

42

44

46

48

50

52

Average Output Power (dBm)

Two-carrier WCDMA 3GPP Drive-up

VDD = 30 V, IDQ = 2.6 A, 3GPP WCDMA,

PAR = 8:1, 10 MHz carrier spacing,

BW = 3.84 MHz

1880 Lower

1880 Upper

1842.5 Lower

1842.5 Upper

1805 Lower

1805 Upper

0

10

20

30

40

15

16

17

18

19

36

38

40

42

44

46

48

50

52

Average Output Power (dBm)

Two-carrier WCDMA 3GPP

VDD = 30 V, IDQ = 2.6 A, ƒ = 1880 MHz, 3GPP

WCDMA, PAR = 8:1, 10 MHz carrier spacing,

BW = 3.84MHz

Efficiency

Gain

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDSS

65

V

Gate-Source Voltage

VGS

–6 to +10

V

Junction Temperature

TJ

200

°C

Storage Temperature Range

TSTG

–40 to +150

°C

Thermal Resistance (TCASE = 70°C, 340 W CW)

RqJC

0.2

°C/W

Ordering Information

Type and Version

Order Code

Package Description

Shipping

PTFB183404E V1 R0

PTFB183404EV1R0XTMA1

Slotted push-pull

Tape & Reel, 50pcs

PTFB183404E V1 R250

PTFB183404EV1R250XTMA1

Slotted push-pull

Tape & Reel, 250pcs

PTFB183404F V2 R0

PTFB183404FV2R0XTMA1

Earless push-pull

Tape & Reel, 50pcs

PTFB183404F V2 R250

PTFB183404FV2R250XTMA1

Earless push-pull

Tape & Reel, 250pcs

Typical Performance (data taken in a production test fixture)

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Infineon Technologies A...	PTFB183404F	727Kb / 18P	High Power RF LDMOS Field Effect Transistors 340 W, 1805 ??1880 MHz Rev. 04, 2010-11-17

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Cree, Inc	PTFB183404E	649Kb / 18P	High Power RF LDMOS Field Effect Transistors 340 W, 1805 ??1880 MHz
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PTFB183404FV2R250 Datasheet(PDF) 3 Page - Infineon Technologies AG

PTFB183404FV2R250 Datasheet(HTML) 3 Page - Infineon Technologies AG

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