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PTFB183404E Datasheet(PDF) 2 Page - Infineon Technologies AG |
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PTFB183404E Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 18 page Data Sheet 2 of 18 Rev. 04.1, 2016-06-10 PTFB183404E PTFB183404F RF Characteristics (cont.) Single-carrier WCDMA Performance (not subject to production test – verified by design / characterization in Infineon test fixture) VDD = 30 V, IDQ = 2.6 A, IQ clipping, channel bandwidth = 3.84 MHz, Input signal PAR = 7.5 dB @ 0.01% CCDF probability Characteristic Conditions Symbol 1805 MHz 1842 MHz 1880 MHz (Typ) (Typ) (Typ) Gain POUT (AVG) = 49 dBm Gps 17.1 17.3 17.5 POUT (AVG) = 51 dBm 17.0 17.15 17.4 Drain Efficiency POUT (AVG) = 49 dBm hD 25 24.5 24 POUT (AVG) = 51 dBm 31 30 30 Output PAR at 0.01% POUT (AVG) = 49 dBm dB 6.5 6.5 6.5 POUT (AVG) = 51 dBm 5.5 5.5 5.5 Adjacent Channel Power Ratio POUT (AVG) = 49 dBm ACPR –43 –42.5 –41 POUT (AVG) = 51 dBm –36 –35 –34 Two-tone Specifications (not subject to production test – verified by design / characterization in Infineon test fixture) VDD = 30 V, IDQ = 2.6 A, POUT = 310 W PEP, ƒ = 1880 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps — 17.5 — dB Drain Efficiency hD — 35 — % Intermodulation Distortion IMD — 30 — dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA Drain Leakage Current VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.05 — W Operating Gate Voltage VDS = 30 V, IDQ = 2.6 A VGS 2.3 2.8 3.3 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA |
Similar Part No. - PTFB183404E_16 |
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Similar Description - PTFB183404E_16 |
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