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PTFB183404E Datasheet(PDF) 2 Page - Infineon Technologies AG

Part # PTFB183404E
Description  High Power RF LDMOS Field Effect Transistors 340 W, 1805 ??1880 MHz
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

PTFB183404E Datasheet(HTML) 2 Page - Infineon Technologies AG

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Data Sheet
2 of 18
Rev. 04.1, 2016-06-10
PTFB183404E
PTFB183404F
RF Characteristics (cont.)
Single-carrier WCDMA Performance (not subject to production test – verified by design / characterization in Infineon test
fixture)
VDD = 30 V, IDQ = 2.6 A, IQ clipping, channel bandwidth = 3.84 MHz, Input signal PAR = 7.5 dB @ 0.01% CCDF probability
Characteristic
Conditions
Symbol
1805 MHz
1842 MHz
1880 MHz
(Typ)
(Typ)
(Typ)
Gain
POUT (AVG) = 49 dBm
Gps
17.1
17.3
17.5
POUT (AVG) = 51 dBm
17.0
17.15
17.4
Drain Efficiency
POUT (AVG) = 49 dBm
hD
25
24.5
24
POUT (AVG) = 51 dBm
31
30
30
Output PAR at 0.01%
POUT (AVG) = 49 dBm
dB
6.5
6.5
6.5
POUT (AVG) = 51 dBm
5.5
5.5
5.5
Adjacent Channel Power Ratio
POUT (AVG) = 49 dBm
ACPR
–43
–42.5
–41
POUT (AVG) = 51 dBm
–36
–35
–34
Two-tone Specifications (not subject to production test – verified by design / characterization in Infineon test fixture)
VDD = 30 V, IDQ = 2.6 A, POUT = 310 W PEP, ƒ = 1880 MHz, tone spacing = 1 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
17.5
dB
Drain Efficiency
hD
35
%
Intermodulation Distortion
IMD
30
dBc
DC Characteristics
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA
V(BR)DSS
65
V
Drain Leakage Current
VDS = 28 V, VGS = 0 V
IDSS
1.0
µA
Drain Leakage Current
VDS = 63 V, VGS = 0 V
IDSS
10.0
µA
On-State Resistance
VGS = 10 V, VDS = 0.1 V
RDS(on)
0.05
W
Operating Gate Voltage
VDS = 30 V, IDQ = 2.6 A
VGS
2.3
2.8
3.3
V
Gate Leakage Current
VGS = 10 V, VDS = 0 V
IGSS
1.0
µA


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