PTFB193404FV1R0 datasheet(5/14 Pages) INFINEON

Part #	PTFB193404FV1R0

Description	Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 ??1990 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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5 / 14 page

Data Sheet

5 of 14

Rev. 05.2, 2016-06-14

PTFB193404F

Typical Performance (cont.)

-45

-35

-25

-15

Intermodulation Distortion

vs. Output Power

VDD = 30 V, IDQ = 2.6 A,

ƒ1 = 1989 MHz, ƒ2 = 1990 MHz

3rd Order

7th

5th

-75

-65

-55

39 41 43 45 47 49 51 53 55 57

Output Power, PEP (dBm)

-40

-30

-20

-10

Intermodulation Distortion

vs. Tone Spacing

VDD = 30 V, IDQ = 2.6 A,

ƒ = 1930 MHz, POUT = 317 W (PEP)

IMD7

IMD5

IMD3

-70

-60

-50

1

10

100

Two Tone Spacing (MHz)

IMD7

IMD Lower

IMD Upper

15

20

25

30

35

40

-40

-30

-20

Single-carrier WCDMA Drive-up

VDD = 30 V, IDQ = 2.6 A, ƒ = 1990 MHz,

3GPP WCDMA signal, TM1 w/16 DPCH,

43% clipping, PAR = 7.5 dB, 3.84 MHz BW

Efficiency

ACPR Up

0

5

10

15

-60

-50

36

38

40

42

44

46

48

50

52

Average Output Power (dBm)

ACPR Up

ACPR Low

-50

-40

-30

-20

Two-tone Drive-up

at Selected Frequencies

VDD = 30 V, IDQ = 2.6 A, tone spacing = 1 MHz

-70

-60

39 41 43 45 47 49 51 53 55 57

Output Power, PEP (dBm)

1990 MHz

1960 MHz

1930 MHz

Similar Part No. - PTFB193404FV1R0

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	PTFB193404F	244Kb / 14P	Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930-1990 MHz Rev. 04, 2011-02-07
Cree, Inc	PTFB193404F	610Kb / 14P	Thermally-Enhanced High Power RF LDMOS FET 340 W, 30 V, 1930 ??1990 MHz

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Similar Description - PTFB193404FV1R0

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	PTFB193404F	244Kb / 14P	Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930-1990 MHz Rev. 04, 2011-02-07
Cree, Inc	PTFB193404F	610Kb / 14P	Thermally-Enhanced High Power RF LDMOS FET 340 W, 30 V, 1930 ??1990 MHz
Infineon Technologies A...	PTFA192401E	431Kb / 11P	Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 ??1990 MHz Rev. 02, 2009-04-01
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	PTF191601F	206Kb / 10P	Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz 2004-09-16
Cree, Inc	PTFB192503FL	531Kb / 14P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 1930 ??1990 MHz

More results

PTFB193404FV1R0 Datasheet(PDF) 5 Page - Infineon Technologies AG

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