PTFB212503EL datasheet(5/14 Pages) INFINEON

Part #	PTFB212503EL

Description	Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ??2170 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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5 / 14 page

PTFB212503EL

PTFB212503FL

Data Sheet

5 of 14

Rev. 07.1, 2016-06-15

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35

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55

Output Power (dBm)

CW Performance

Gain vs. Output Power

VDD = 30 V, ƒ = 2170 MHz

IDQ = 1.85 A

IDQ = 2.11 A

IDQ = 1.30 A

0

10

20

30

40

50

60

-80

-70

-60

-50

-40

-30

-20

33 35 37 39 41 43 45 47 49 51

Output Power (dBm)

Single-carrier WCDMA

VDD = 30 V, IDQ = 1.85 A ƒ = 2170 MHz, 3GPP

WCDMA, PAR = 8.5 dB, BW 3.84 MHz

IM3

Efficiency

-50

-45

-40

-35

-30

-25

-20

-15

-10

-5

0

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25

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1960

2020

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2140

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Frequency (MHz)

Single-carrier WCDMA, 3GGP Broadband

VDD = 30 V, IDQ = 1.85 A, POUT = 63 W

Gain

Efficiency

RL

IM3

0

10

20

30

40

50

60

15

16

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19

20

21

35

40

45

50

55

Output Power (dBm)

CW Performance

VDD = 30 V, IDQ = 1.85 A, ƒ = 2170 MHz

+25°C

+85° C

–10° C

Efficiency

Gain

Typical Performance (cont.)

Similar Part No. - PTFB212503EL

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	PTFB212503EL	978Kb / 14P	Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110-2170 MHz Rev. 07, 2010-11-04

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Similar Description - PTFB212503EL

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	PTFB212503EL	978Kb / 14P	Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110-2170 MHz Rev. 07, 2010-11-04
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PTFB212503EL Datasheet(PDF) 5 Page - Infineon Technologies AG

PTFB212503EL Datasheet(HTML) 5 Page - Infineon Technologies AG

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