PTFB212503EFL datasheet(1/14 Pages) INFINEON

Part #	PTFB212503EFL

Description	Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ??2170 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

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All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet

1 of 14

Rev. 07.1, 2016-06-15

PTFB212503EL

PTFB212503FL

0

5

10

15

20

25

30

35

40

-55

-50

-45

-40

-35

-30

-25

-20

-15

32

34

36

38

40

42

44

46

48

50

Output Power (dBm)

Two-carrier WCDMA Drive-up

VDD = 30 V, IDQ = 1.85 A, ƒ = 2170 MHz,

3GPP signal, PAR = 8 dB,

10 MHz carrier spacing, BW 3.84 MHz

ACPR

IMD Low

IMD Up

Efficiency

RF Characteristics

Two-carrier WCDMA Specifications (not subject to production test—verified by design/characterization in Infineon test

fixture)

VDD = 30 V, IDQ = 1.85 A, POUT = 55 W average, ƒ1 = 2160 MHz, ƒ2 = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,

peak/average = 8 dB @ 0.01% CCDF

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

Gps

—

18.0

—

dB

Drain Efficiency

hD

—

31

—

%

Intermodulation Distortion

IMD

—

–33

—

dBc

Description

The PTFB212503EL and PTFB212503FL are 240-watt

LDMOS FETs intended for use in multi-standard cellular power

amplifier applications in the 2110 to 2170 MHz frequency band.

Features include input and output matching, high gain, wide

signal bandwidth and reduced memory effects for unparalleled

DPD correctability. Manufactured with Infineon's advanced

LDMOS process, these devices provide excellent thermal

performance and superior reliability.

PTFB212503EL

Package H-33288-6

Features

• Broadbandinternalinputandoutputmatching

• EnhancedforuseinDPDerrorcorrectionsystems

• Widevideobandwidth

• Typicalsingle-carrierWCDMAperformanceat2170MHz,

30 V, IDQ = 1.85 A, 3GPP signal, channel bandwidth =

3.84 MHz, PAR = 7.5 dB @ 0.01% CCDF

- Average output power = 49.4 dBm

- Linear gain = 18 dB

- Efficiency = 37%

- Intermodulation distortion = –33 dBc

• TypicalCWperformance,2170MHz,30V

- Output power at P1dB = 240 W

- Efficiency = 54 %

• Increasednegativegate-sourcevoltagerangefor

improved performance in Doherty peaking amplifiers

• IntegratedESDprotection:HumanBodyModel,Class2

(minimum)

• Capableofhandling10:1VSWR@30V,240W(CW)

output power

• Pb-free,RoHS-compliant

PTFB212503FL

Package H-34288-4/2

Thermally-Enhanced High Power RF LDMOS FETs

240 W, 2110 – 2170 MHz

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PTFB212503EFL Datasheet(PDF) 1 Page - Infineon Technologies AG

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