PTFB241402FV1R0XTMA1 datasheet(4/13 Pages) INFINEON

Part #	PTFB241402FV1R0XTMA1

Description	High Power RF LDMOS Field Effect Transistor 140 W, 2300 ??2400 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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4 / 13 page

Data Sheet

4 of 13

Rev. 04.1, 2016-06-15

PTFB241402F

-60

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Average Output Power (dBm)

Two-tone Performance

at Selected Frequencies, Single Side

VDD = 30 V, IDQ = 660 mA, 1 MHz Spacing

Efficiency

IMD3

IMD5

2320 MHz

2350 MHz

2380 MHz

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Average Output Power (dBm)

Wimax Performance, Single Side

VDD = 30 V, IDQ = 680 mA, modulation =

64 QAM2/3, channel bandwidth = 1.75 MHz,

sample rate = 2 MHz

Efficiency

EVM

ƒ = 2.32 GHz

ƒ = 2.35 GHz

ƒ = 2.38 GHz

Typical Performance (cont.)

Similar Part No. - PTFB241402FV1R0XTMA1

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	PTFB241402F	556Kb / 13P	High Power RF LDMOS Field Effect Transistor 140 W, 2300 ??2400 MHz Rev. 03, 2010-04-19

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Similar Description - PTFB241402FV1R0XTMA1

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	PTFB241402F	556Kb / 13P	High Power RF LDMOS Field Effect Transistor 140 W, 2300 ??2400 MHz Rev. 03, 2010-04-19
Cree, Inc	PXAC243502FV	543Kb / 10P	High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz
Infineon Technologies A...	PXAC243502FV	1Mb / 10P	High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22
Cree, Inc	PTFB201402FC	595Kb / 14P	High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 - 2025 MHz
Infineon Technologies A...	PTAC240502FC	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 ??2400 MHz Rev. 02.3, 2016-06-21
Cree, Inc	PXAC241702FC	577Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz
Cree, Inc	PTAC240502FC	606Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 ??2400 MHz
Infineon Technologies A...	PXAC241702FC	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz Rev. 02.1, 2016-06-22
Cree, Inc	PXAC241002FC	279Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 ??2400 MHz
WOLFSPEED, INC.	PTAC240502FC_V1	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz Rev. 05, 2023-06-28

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PTFB241402FV1R0XTMA1 Datasheet(PDF) 4 Page - Infineon Technologies AG

PTFB241402FV1R0XTMA1 Datasheet(HTML) 4 Page - Infineon Technologies AG

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