PTFC260202FCV1R0 datasheet(2/9 Pages) INFINEON

Part #	PTFC260202FCV1R0

Description	Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 ??2690 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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2 / 9 page

Data Sheet

2 of 9

Rev. 03.3, 2016-06-21

PTFC260202FC

DC Characteristics (singleside)

Characteristic

Conditions

Symbol

Min

Typ

Max

Unit

Drain-SourceBreakdownVoltage

VGS=0V,IDS=10mA

V(BR)DSS

65

—

V

DrainLeakageCurrent

VDS=28V,VGS=0V

IDSS

—

1

µA

VDS=63V,VGS=0V

IDSS

—

10

µA

On-StateResistance

VGS=10V,VDS=0.1V

RDS(on)

—

0.05

—

W

OperatingGateVoltage

VDS=28V,IDQ = 1.35A

VGS

2.3

2.8

3.3

V

GateLeakageCurrent

VGS=10V,VDS=0V

IGSS

—

1

µA

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain-SourceVoltage

VDSS

65

V

Gate-SourceVoltage

VGS

–6to+10

V

OperatingVoltage

VDD

0to+32

V

Junction Temperature

TJ

225

°C

Storage Temperature Range

TSTG

–65 to +150

°C

Thermal Resistance (TCASE=70°C,25WCW)

RqJC

2.2

°C/W

Ordering Information

Type and Version

Order Code

Package Description

Shipping

PTFC260202FCV1R0

PTFC260202FCV1R0XTMA1

H-37248-4,earlessflange

Tape&Reel,50pcs

PTFC260202FCV1R250

PTFC260202FCV1R250XTMA1

H-37248-4,earlessflange

Tape&Reel,250pcs

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PTFC260202FCV1R0 Datasheet(PDF) 2 Page - Infineon Technologies AG

PTFC260202FCV1R0 Datasheet(HTML) 2 Page - Infineon Technologies AG

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