PTFC260202FC datasheet(7/9 Pages) INFINEON

Part #	PTFC260202FC

Description	Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 ??2690 MHz

Download	9 Pages

Scroll/Zoom	100%

Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

Logo

7 / 9 page

PTFC260202FC

Data Sheet

7 of 9

Rev. 03.3, 2016-06-21

Components Information

Component

Description

Suggested Manufacturer

P/N

Input

C101,C105,C106,C109

Chipcapacitor,15pF

ATC

ATC800A150GT250X

C102,C108

Capacitor,220000pF

Digi-Key

445-1814-2-ND

C103,C107

Chipcapacitor,10µF

Digi-Key

587-1818-2-ND

C104

Chipcapacitor,1.2pF

ATC

ATC800A1R2GT250X

R101, R102

Resistor, 10 W

Digi-Key

P10ECT-ND

R103, R104

Resistor, 4.7 W

Digi-Key

P4.7ECT-ND

Output

C201,C205

Chipcapacitor,15pF

ATC

ATC800A150GT250X

C202,C206

Chipcapacitor,1.6pF

ATC

ATC800A1R6BT250X

C203,C207

Chipcapacitor,1pF

ATC

ATC800A1R0BT250X

C204,C210

Chipcapacitor,10µF

Digi-Key

587-1818-2-ND

C208,C209

Capacitor,100µF

Digi-Key

P5571-ND

R201

Resistor, 100 W

Digi-Key

CR11206T0100J

Reference Circuit(cont.)

Reference Circuit Assembly

DUT

PTFC260202FC

TestFixturePartNo.

LTN/PTFC260202FC

PCB

Rogers4350,0.508 mm [0.020”] thick, 2 oz. copper, εr=3.66,ƒ=2680MHz

FindGerberfilesforthistestfixtureontheInfineonWebsiteathttp://www.infineon.com/rfpower

Pinout Diagram (topview)

Lead connections for PTFC260202FC

H-37248-4_pd_10-10-2012

S

D1

D2

G1

G2

Description

D1

Drain Device 1

D2

Drain Device 2

G1

Gate Device 1

G2

Gate Device 2

S

Source(flange)

Similar Part No. - PTFC260202FC

Manufacturer	Part #	Datasheet	Description
Cree, Inc	PTFC260202FC	519Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 ??2690 MHz

More results

Similar Description - PTFC260202FC

Manufacturer	Part #	Datasheet	Description
Cree, Inc	PTFC260202FC	519Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 ??2690 MHz
Infineon Technologies A...	PTFC261402FC	231Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 2620 ??2690 MHz Rev. 05, 2016-06-21
	PTFC262157FH	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 ??2690 MHz Rev. 03.1, 2016-06-21
	PTFC262808SV	180Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 ??2690 MHz Rev. 02.1, 2013-08-02
Cree, Inc	PXAC261212FC	557Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz
Infineon Technologies A...	PXAC261002FC	162Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 ??2690 MHz Rev. 03.3, 2016-06-15
Infineon Technologies A...	PTFC262808FV	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 ??2690 MHz Rev. 03, 2016-06-22
Cree, Inc	PTFC262808FV	806Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 ??2690 MHz
Cree, Inc	PXAC261002FC	634Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 ??2690 MHz
Infineon Technologies A...	PXAC261212FC	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz Rev. 02.2, 2016-06-22

More results

PTFC260202FC Datasheet(PDF) 7 Page - Infineon Technologies AG

PTFC260202FC Datasheet(HTML) 7 Page - Infineon Technologies AG

Similar Part No. - PTFC260202FC

Similar Description - PTFC260202FC

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL