PTVA042502ECV1R250XTMA1 datasheet(1/10 Pages) INFINEON

Part #	PTVA042502ECV1R250XTMA1

Description	Thermally-Enhanced High Power RF LDMOS FET 250 W, 50 V, 470 ??806 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

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PTVA042502EC

PTVA042502FC

All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet

1 of 10

Rev. 03.1, 2016-04-19

Thermally-Enhanced High Power RF LDMOS FET

250 W, 50 V, 470 – 806 MHz

Description

The PTVA042502EC and PTVA042502FC LDMOS FETs are designed

for use in power amplifier applications in the 470 MHz to 806 MHz

frequency band. Features include high gain and thermally-enhanced

package with bolt-down or earless flanges. Manufactured with Infineon's

advanced LDMOS process, these devices provide excellent thermal per-

formance and superior reliability.

PTVA042502FC

Package H-37248-4

Features

• Input matched

• Integrated ESD protection

• Human Body Model Class 1C (per ANSI/

ESDA/JEDEC JS-001)

• Low thermal resistance

• RoHS compliant

• Capable of withstanding a 10:1 VSWR at 55W

average power under DVB-T signal condition

RF Characteristics

DVB-T (8K OFDM, 64QAM) Characteristics (tested in Infineon test fixture)

VDD = 50 V, IDQ = 800 mA, ƒ = 806 MHz, input PAR = 10.5 dB (unclipped), output PAR = 7.8 dB @ 0.01% CCDF probability

Characteristic

Symbol

Min

Typ

Max

Unit

Average Output Power

POUT

—

55

—

W

Gain

Gps

17.5

19

—

dB

Drain Efficiency

hD

23

25.5

—

%

Adjacent Channel Power Ratio

ACPR

—

–29.5

–25

dBc

(ACPR integrated over 200 KHz BW at + 4.3 MHz offset from center frequency)

PTVA042502EC

Package H-36248-4

-33

-31

-29

-27

-25

-23

10

15

20

25

30

35

450 500 550 600 650 700 750 800 850

Frequency (MHz)

DVB-T Performance

Efficiancy, Gain and

IMD3 Shoulder vs Frequency

VDD = 50 V, IDQ = 800 mA, POUT = 55 W avg

Efficiency

Gain

IMD Shoulder

ptva042502fc_g1

ACPR

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Manufacturer	Part #	Datasheet	Description
Cree, Inc	PTVA042502EC	560Kb / 10P	Thermally-Enhanced High Power RF LDMOS FETs 250 W, 50 V, 470 - 806 MHz
Cree, Inc	PTVA047002EV	449Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 470 ??806 MHz
WOLFSPEED, INC.	PTVA047002EV	423Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 470 – 806 MHz Rev. 05, 2018-08-20
Infineon Technologies A...	PTFA043002E	305Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 ??860 MHz Rev. 03.1, 2009-02-20
Infineon Technologies A...	PTVA043502EC	1Mb / 11P	Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 470 ??860 MHz Rev. 02.2, 2017-02-09
Cree, Inc	PTVA043502EC	489Kb / 11P	Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 470 - 860 MHz
Cree, Inc	PTVA120501EA	683Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 ??1400 MHz
Infineon Technologies A...	PTVA120501EA	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 ??1400 MHz Rev. 02.1, 2016-05-26
WOLFSPEED, INC.	PTVA120501EA	695Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 – 1400 MHz Rev. 04, 2023-07-10
Cree, Inc	PTVA102001EA	451Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 200 W, 50 V, 960 ??1600 MHz

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PTVA042502ECV1R250XTMA1 Datasheet(PDF) 1 Page - Infineon Technologies AG

PTVA042502ECV1R250XTMA1 Datasheet(HTML) 1 Page - Infineon Technologies AG

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