ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet

1 of 10

Rev. 04, 2014-06-16

PTVA093002TC

PTVA093002TC

Package H-49248H-4, formed leads

Thermally-Enhanced High Power RF LDMOS FET

300 W, 50 V, 703 – 960 MHz

Description

The PTVA093002TC is a 300-watt LDMOS FET. Designed for use in

multi-standard cellular power amplifier applications, it can be used as

single-ended or in a Doherty configuration. It features dual-path design,

input matching, and a thermally-enhanced surface-mount package.

Manufactured with Infineon's advanced LDMOS process, this device

provides excellent thermal performance and superior reliability.

Features

•

Typical CW performance in a combined-lead

50-ohm single-ended fixture, 780 MHz, 50 V

- Gain = 18.2 dB

- Efficiency = 52%

•

Typical pulsed CW performance in a combined-lead

50-ohm single-ended fixture, 870 MHz, 50 V

- Gain = 16.2 dB

- Efficiency = 50%

•

Integrated ESD protection, Human Body Model

class 2 (per JESD22-A114)

•

Capable of withstanding a 10:1 load mismatch at

50 V, 63 W (CW) output power

•

Low thermal resistance

•

Pb-free and RoHS compliant

RF Specifications

3GPP WCDMA signal: 3.84 MHz bandwidth, 10 dB PAR @0.01% CCDF.

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

17.5

18.5

—

dB

Drain Efficiency

40

45

—

%

Adjacent Channel Power Ratio

ACPR

—

–34

–32

dBc

-60

-40

-20

0

20

40

60

0

4

8

12

16

20

24

25

30

35

40

45

50

55

Average Output Power (dBm)

Single-carrier 3GPP WCDMA

V

3.84 MHz bandwidth, 10 dB PAR

Gain

Efficiency

PAR @ 0.01% CCDF

a093002tc-gr1a