Data Sheet

1 of 14

Rev. 05.1, 2016-04-26

ESD: Electrostatic discharge sensitive device—observe handling precautions!

PTVA123501EC

PTVA123501FC

Thermally-Enhanced High Power RF LDMOS FETs

350 W, 50 V, 1200 – 1400 MHz

Description

The PTVA123501EC and PTVA123501FC LDMOS FETs are designed

for use in power amplifier applications in the 1200 MHz to 1400 MHz

frequency band. Features include high gain and thermally-enhanced

package with slotted and earless flanges. Manufactured with Infineon's

advanced LDMOS process, these devices provide excellent thermal

performance and superior reliability.

PTVA123501EC

Package H-36248-2

Features

• Broadband internal input and output matching

• High gain and efficiency

• Integrated ESD protection

• Human Body Model Class 2 (per ANSI/ESDA/

JEDEC JS-001)

• Low thermal resistance

• Excellent ruggedness

• Pb-free and RoHS compliant

• Capable of withstanding a 10:1 load

mismatch (all phase angles) at 55.5 dBm

20

30

40

50

60

70

80

30

35

40

45

50

55

60

30

32

34

36

38

40

42

Power Sweep, Pulsed RF

300 µs pulse width, 12% duty cycle

1200 MHz

1300 MHz

1400 MHz

Output Power

Efficiency

a123501ec_g1-1

RF Characteristics

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

16.5

17

—

dB

Drain Efficiency

54

55

—

%

Return Loss

IRL

—

–12

–9

dB

PTVA123501FC

Package H-37248-2