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PXAC192908FVV1R250XTMA1 Datasheet(PDF) 2 Page - Infineon Technologies AG

Part # PXAC192908FVV1R250XTMA1
Description  Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 ??1995 MHz
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

PXAC192908FVV1R250XTMA1 Datasheet(HTML) 2 Page - Infineon Technologies AG

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Data Sheet
2 of 9
Rev. 02.3, 2016-06-17
PXAC192908FV
DC Characteristics (each side)
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VGS = 0 V, IDS = 10 mA
V(BR)DSS
65
V
Drain Leakage Current
VDS = 28 V, VGS = 0 V
IDSS
1
µA
VDS = 63 V, VGS = 0 V
IDSS
10
µA
On-State Resistance (main)
VGS = 10 V, VDS = 0.1 V
RDS(on)
0.11
W
(peak)
VGS = 10 V, VDS = 0.1 V
RDS(on)
0.06
W
Operating Gate Voltage (main)
VDS = 28 V, IDQ = 0.6 A
VGS
2.5
2.65
2.75
V
(peak)
VDS = 28 V, IDQ = 0 A
VGS
0.45
0.55
0.75
V
Gate Leakage Current
VGS = 10 V, VDS = 0 V
IGSS
1
µA
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
V
Gate-Source Voltage
VGS
–6 to +10
V
Operating Voltage
VDD
0 to +32
V
Junction Temperature
TJ
225
°C
Storage Temperature Range
TSTG
–65 to +150
°C
Thermal Resistance (Doherty, TCASE = 70°C, 200 W CW, 1960 MHz,
RqJC
0.32
°C/W
28V, IDQ (main) = 600 mA, VGS (peak) = 0.55 V)
Ordering Information
Type and Version
Order Code
Package Description
Shipping
PXAC192908FV V1 R0
PXAC192908FVV1R0XTMA1
H-37275G-6/2, earless flange
Tape & Reel, 50 pcs
PXAC192908FV V1 R250
PXAC192908FVV1R250XTMA1
H-37275G-6/2, earless flange
Tape & Reel, 250 pcs


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