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SUM70N04-07L Datasheet(PDF) 2 Page - Vishay Siliconix |
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SUM70N04-07L Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page ![]() SUM70N04-07L Vishay Siliconix New Product www.vishay.com 2 Document Number: 72345 S-31617—Rev. A, 11-Aug-03 SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 mA 40 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1 3 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V 100 nA VDS = 32 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS VDS = 32 V, VGS = 0 V, TJ = 125_C 50 mA g DSS VDS = 32 V, VGS = 0 V, TJ = 175_C 250 m On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 100 A VGS = 10 V, ID = 30 A 0.006 0.0074 Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 10 A 0.0085 0.011 W Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 30 A, TJ = 125_C 0.012 W VGS = 10 V, ID = 30 A, TJ = 175_C 0.015 Forward Transconductancea gfs VDS = 15 V, ID = 30 A 20 S Dynamicb Input Capacitance Ciss 2800 Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 320 pF Reverse Transfer Capacitance Crss 190 Total Gate Chargec Qg 50 75 Gate-Source Chargec Qgs VDS = 20 V, VGS = 10 V, ID = 50 A 10 nC Gate-Drain Chargec Qgd DS , GS , D 10 Gate Resistance RG 2.0 W Turn-On Delay Timec td(on) 11 20 Rise Timec tr VDD = 20 V, RL = 0.4 W 20 30 ns Turn-Off Delay Timec td(off) VDD = 20 V, RL = 0.4 W ID ^ 50 A, VGEN = 10 V, RG = 2.5 W 40 60 ns Fall Timec tf 15 25 Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current IS 66 A Pulsed Current ISM 100 A Forward Voltagea VSD IF = 50 A, VGS = 0 V 1.0 1.5 V Reverse Recovery Time trr 30 50 ns Peak Reverse Recovery Current IRM(REC) IF = 50 A, di/dt = 100 A/ms 1.6 2.4 A Reverse Recovery Charge Qrr F m 0.024 0.06 mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. |
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