SUM70N04-07L datasheet(2/5 Pages) VISHAY | N-Channel 40-V (D-S) 175C MOSFET

Part #	SUM70N04-07L

Description	N-Channel 40-V (D-S) 175C MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SUM70N04-07L

Vishay Siliconix

New Product

www.vishay.com

2

Document Number: 72345

S-31617—Rev. A, 11-Aug-03

SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VDS = 0 V, ID = 250 mA

40

V

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

1

3

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

100

nA

VDS = 32 V, VGS = 0 V

1

Zero Gate Voltage Drain Current

IDSS

VDS = 32 V, VGS = 0 V, TJ = 125_C

50

mA

g

DSS

VDS = 32 V, VGS = 0 V, TJ = 175_C

250

m

On-State Drain Currenta

ID(on)

VDS w 5 V, VGS = 10 V

100

A

VGS = 10 V, ID = 30 A

0.006

0.0074

Drain-Source On-State Resistancea

rDS(on)

VGS = 4.5 V, ID = 10 A

0.0085

0.011

W

Drain-Source On-State Resistancea

rDS(on)

VGS = 10 V, ID = 30 A, TJ = 125_C

0.012

W

VGS = 10 V, ID = 30 A, TJ = 175_C

0.015

Forward Transconductancea

gfs

VDS = 15 V, ID = 30 A

20

S

Dynamicb

Input Capacitance

Ciss

2800

Output Capacitance

Coss

VGS = 0 V, VDS = 25 V, f = 1 MHz

320

pF

Reverse Transfer Capacitance

Crss

190

Total Gate Chargec

Qg

50

75

Gate-Source Chargec

Qgs

VDS = 20 V, VGS = 10 V, ID = 50 A

10

nC

Gate-Drain Chargec

Qgd

DS

,

GS

, D

10

Gate Resistance

RG

2.0

W

Turn-On Delay Timec

td(on)

11

20

Rise Timec

tr

VDD = 20 V, RL = 0.4 W

20

30

ns

Turn-Off Delay Timec

td(off)

VDD = 20 V, RL = 0.4 W

ID ^ 50 A, VGEN = 10 V, RG = 2.5 W

40

60

ns

Fall Timec

tf

15

25

Source-Drain Diode Ratings and Characteristics (TC = 25_C)b

Continuous Current

IS

66

A

Pulsed Current

ISM

100

A

Forward Voltagea

VSD

IF = 50 A, VGS = 0 V

1.0

1.5

V

Reverse Recovery Time

trr

30

50

ns

Peak Reverse Recovery Current

IRM(REC)

IF = 50 A, di/dt = 100 A/ms

1.6

2.4

A

Reverse Recovery Charge

Qrr

F

m

0.024

0.06

mC

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

c.

Independent of operating temperature.

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