PXAC243502FV_16 datasheet(2/10 Pages) INFINEON

Part #	PXAC243502FV

Description	High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

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2 / 10 page

PXAC243502FV

Data Sheet

2 of 10

Rev. 03.2, 2016-06-22

DC Characteristics

Characteristic

Conditions

Symbol

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VGS = 0 V, IDS = 10 mA

V(BR)DSS

65

—

V

Drain Leakage Current

VDS = 28 V, VGS = 0 V

IDSS

—

1

µA

VDS = 63 V, VGS = 0 V

IDSS

—

10

µA

Gate Leakage Current

VGS = 10 V, VDS = 0 V

IGSS

—

1

µA

On-State Resistance

main

VGS = 10 V, VDS = 0.1 V

RDS(on)

—

0.088

—

W

peak

VGS = 10 V, VDS = 0.1 V

RDS(on)

—

0.088

—

W

Operating Gate Voltage

main

VDS = 28 V, IDQ = 850 mA

VGS

2.3

2.6

3.0

V

peak

VDS = 28 V, IDQ = 0 mA

VGS

0.8

1.2

1.6

V

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDSS

65

V

Gate-Source Voltage

VGS

–6 to +10

V

Operating Voltage

VDD

0 to +32

V

Junction Temperature

TJ

225

°C

Storage Temperature Range

TSTG

–65 to +150

°C

Thermal Resistance (TCASE = 70°C, 250 W CW)

RqJC

0.22

°C/W

Ordering Information

Type and Version

Order Code

Package and Description

Shipping

PXAC243502FV V1 R0

PXAC243502FVV1R0XTMA1

H-37275-4

Tape & Reel, 50 pcs

PXAC243502FV V1 R250

PXAC243502FVV1R250XTMA1

H-37275-4

Tape & Reel, 250 pcs

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Cree, Inc	PXAC241702FC	577Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz
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Cree, Inc	PTFC270051M	745Kb / 14P	High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 ??2700 MHz

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PXAC243502FV Datasheet(PDF) 2 Page - Infineon Technologies AG

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