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PXAC261212FCV1R0XTMA1 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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PXAC261212FCV1R0XTMA1 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 10 page All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 10 Rev. 02.2, 2016-06-22 PXAC261212FC PXAC261212FC Package H-37248-4 Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 – 2690 MHz Description The PXAC261212FC is a 120-watt LDMOS FET with an asymmetric designed for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. It features dual-path design, input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features • Broadband internal matching • Asymmetric design - Main P1dB = 50 W - Peak P1dB = 75 W • CW performance in Doherty configuration, 2635 MHz, 28 V - Output power at P1dB = 107 W - Gain = 14.4 dB - Efficiency = 57% • Integrated ESD protection: Human Body Model, class 1C (per JESD22-A114) • Capable of handling 10:1 VSWR @28 V, 120 W (CW) output power • Low thermal resistance • Pb-free and RoHS-compliant RF Characteristics Two-carrier WCDMA Specifications (tested in Infineon Doherty test fixture) VDD = 28 V, VGS(peak) = 1.3 V, IDQ = 280 mA, POUT = 28 W average, ƒ1 = 2630 MHz, ƒ2 = 2640 MHz. 3GPP WCDMA signal: 3.84 MHz bandwidth, 8 dB PAR @0.01% CCDF. Characteristic Symbol Min Typ Max Unit Linear Gain Gps 14.2 15.0 — dB Drain Efficiency hD 45 48 — % Intermodulation Distortion IMD — –25 –22 dBc 0 10 20 30 40 50 60 11 12 13 14 15 16 17 29 33 37 41 45 49 53 Output Power (dBm) Two-carrier 3GPP WCDMA VDD = 28 V, IDQ = 280 mA, VGS = 2.62 V, ƒ = 2635 MHz 10 MHz carrier spacing, 8 dB PAR 3.84 MHz bandwidth Gain Efficiency c261212fc-gr1c |
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