PXAC261212FCV1R0XTMA1 datasheet(1/10 Pages) INFINEON

Part #	PXAC261212FCV1R0XTMA1

Description	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet

1 of 10

Rev. 02.2, 2016-06-22

PXAC261212FC

Package H-37248-4

Thermally-Enhanced High Power RF LDMOS FET

120 W, 28 V, 2496 – 2690 MHz

Description

The PXAC261212FC is a 120-watt LDMOS FET with an asymmetric

designed for use in multi-standard cellular power amplifier applications

in the 2496 to 2690 MHz frequency band. It features dual-path design,

input and output matching, and a thermally-enhanced package with

earless flange. Manufactured with Infineon's advanced LDMOS

process, this device provides excellent thermal performance and

superior reliability.

Features

• Broadband internal matching

• Asymmetric design

- Main P1dB = 50 W

- Peak P1dB = 75 W

• CW performance in Doherty configuration,

2635 MHz, 28 V

- Output power at P1dB = 107 W

- Gain = 14.4 dB

- Efficiency = 57%

• Integrated ESD protection: Human Body Model,

class 1C (per JESD22-A114)

• Capable of handling 10:1 VSWR @28 V, 120 W

(CW) output power

• Low thermal resistance

• Pb-free and RoHS-compliant

RF Characteristics

Two-carrier WCDMA Specifications (tested in Infineon Doherty test fixture)

VDD = 28 V, VGS(peak) = 1.3 V, IDQ = 280 mA, POUT = 28 W average, ƒ1 = 2630 MHz, ƒ2 = 2640 MHz. 3GPP WCDMA signal:

3.84 MHz bandwidth, 8 dB PAR @0.01% CCDF.

Characteristic

Symbol

Min

Typ

Max

Unit

Linear Gain

Gps

14.2

15.0

—

dB

Drain Efficiency

hD

45

48

—

%

Intermodulation Distortion

IMD

—

–25

–22

dBc

0

10

20

30

40

50

60

11

12

13

14

15

16

17

29

33

37

41

45

49

53

Output Power (dBm)

Two-carrier 3GPP WCDMA

VDD = 28 V, IDQ = 280 mA,

VGS = 2.62 V, ƒ = 2635 MHz

10 MHz carrier spacing, 8 dB PAR

3.84 MHz bandwidth

Gain

Efficiency

c261212fc-gr1c

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PXAC261212FCV1R0XTMA1 Datasheet(PDF) 1 Page - Infineon Technologies AG

PXAC261212FCV1R0XTMA1 Datasheet(HTML) 1 Page - Infineon Technologies AG

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