PXFC193808SVV1R250 datasheet(6/10 Pages) INFINEON

Part #	PXFC193808SVV1R250

Description	Thermally-Enhanced High Power RF LDMOS FET 380 W, 28 V, 1805 ??1880 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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6 / 10 page

PXFC193808SV

Data Sheet

6 of 10

Rev. 02.1, 2015-01-13

Single side pulsed CW signal: 10 µsec, 10% duty cycle; 28 V, 1440 mA

P3dB

Class AB

Max Output Power

Max Efficiency

Freq

[MHz]

Zin

[

Ω]

Zo

[

Ω]

Gain

[dB]

POUT

[dBm]

POUT

[W]

PAE

[%]

Zo

[

Ω]

Gain

[dB]

POUT

[dBm]

POUT

[W]

Efficiency

[%]

1805.0

0.90 – j6.31

5.32 – j5.58

17.6

54.64

291

55.8

3.61 – j3.45

19.3

53.81

240

64.0

1842.5

1.26 – j7.08

5.67 – j5.06

17.5

54.57

286

55.8

3.60 – j3.43

19.2

53.77

238

63.7

1880.0

1.86 – j8.27

6.17 – j4.71

18.0

54.52

283

54.8

3.52 – j3.70

19.6

53.73

236

63.2

Z Source

Z Load

G

S

D

Frequency

[MHz]

Z Source

[

Ω]

Z Load

[

Ω]

1805.0

0.59 –j5.21

1.87 –j2.27

1842.5

0.55 –j5.14

1.92 –j2.38

1880.0

0.55 –j5.07

1.94 –j2.54

Load Pull Performance

Single side pulsed CW signal: 10 µsec, 10% duty cycle; 28 V, 1440 mA

P1dB

Class AB

Max Output Power

Max Efficiency

Freq

[MHz]

Zin

[

Ω]

Zo

[

Ω]

Gain

[dB]

POUT

[dBm]

POUT

[W]

PAE

[%]

Zo

[

Ω]

Gain

[dB]

POUT

[dBm]

POUT

[W]

Efficiency

[%]

1805.0

0.90 – j6.31

4.22 – j5.43

19.8

53.90

245

54.4

2.89 – j2.95

21.9

52.44

175

63.1

1842.5

1.26 – j7.08

4.30 – j5.28

19.7

53.86

243

55.0

2.80 – j3.08

21.8

52.36

172

62.8

1880.0

1.86 – j8.27

5.04 – j5.46

20.0

53.83

241

53.0

2.79 – j3.85

21.8

52.67

185

62.1

Z Source

Z Load

G1

D1

G2

S

D2

Broadband Circuit Impedance

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PXFC193808SVV1R250 Datasheet(PDF) 6 Page - Infineon Technologies AG

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