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SI4947DY Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI4947DY
Description  Dual P-Channel 30-V (D-S) Rated MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4947DY Datasheet(HTML) 2 Page - Vishay Siliconix

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Si4947DY
2
Siliconix
S-49520—Rev. C, 18-Dec-96
Specifications (TJ = 25
_C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = –250 mA
1.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = –30 V, VGS = 0 V
–1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = –30 V, VGS = 0 V, TJ = 55_C
–25
mA
On-State Drain Currentb
ID(on)
VDS w –5 V, VGS = –10 V
–15
A
Drain Source On State Resistanceb
r
VGS = –10 V, ID = 2.5 A
0.066
0.085
W
Drain-Source On-State Resistanceb
rDS(on)
VGS = –4.5 V, ID = 1.8 A
0.125
0.19
W
Forward Transconductanceb
gfs
VDS = –15 V, ID = –2.5 A
5.0
S
Diode Forward Voltageb
VSD
IS = –1.7 A, VGS = 0 V
–0.8
–1.2
V
Dynamica
Total Gate Charge
Qg
8.7
15
Gate-Source Charge
Qgs
VDS = –10 V, VGS = –10 V, ID = –2.5 A
1.9
nC
Gate-Drain Charge
Qgd
1.3
Turn-On Delay Time
td(on)
7
15
Rise Time
tr
VDD = –10 V, RL = 10 W
9
18
Turn-Off Delay Time
td(off)
ID ^ –1 A, VGEN = –10 V, RG = 6 W
14
27
ns
Fall Time
tf
8
15
Source-Drain Reverse Recovery Time
trr
IF = –1.7 A, di/dt = 100 A/ms
50
80
Notes
a.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.


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