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SI4947DY Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI4947DY Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 4 page  Si4947DY 2 Siliconix S-49520—Rev. C, 18-Dec-96 Specifications (TJ = 25 _C Unless Otherwise Noted) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = –250 mA 1.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = –30 V, VGS = 0 V –1 mA Zero Gate Voltage Drain Current IDSS VDS = –30 V, VGS = 0 V, TJ = 55_C –25 mA On-State Drain Currentb ID(on) VDS w –5 V, VGS = –10 V –15 A Drain Source On State Resistanceb r VGS = –10 V, ID = 2.5 A 0.066 0.085 W Drain-Source On-State Resistanceb rDS(on) VGS = –4.5 V, ID = 1.8 A 0.125 0.19 W Forward Transconductanceb gfs VDS = –15 V, ID = –2.5 A 5.0 S Diode Forward Voltageb VSD IS = –1.7 A, VGS = 0 V –0.8 –1.2 V Dynamica Total Gate Charge Qg 8.7 15 Gate-Source Charge Qgs VDS = –10 V, VGS = –10 V, ID = –2.5 A 1.9 nC Gate-Drain Charge Qgd 1.3 Turn-On Delay Time td(on) 7 15 Rise Time tr VDD = –10 V, RL = 10 W 9 18 Turn-Off Delay Time td(off) ID ^ –1 A, VGEN = –10 V, RG = 6 W 14 27 ns Fall Time tf 8 15 Source-Drain Reverse Recovery Time trr IF = –1.7 A, di/dt = 100 A/ms 50 80 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. |
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