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SI4947ADY Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI4947ADY Datasheet(HTML) 2 Page - Vishay Siliconix |
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Si4947ADY Vishay Siliconix www.vishay.com 2 Document Number: 71101 S-31989—Rev. C, 13-Oct-03 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250 mA -1.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = -30 V, VGS = 0 V -1 mA Zero Gate Voltage Drain Current IDSS VDS = -30 V, VGS = 0 V, TJ = 70_C -10 mA On-State Drain Currenta ID(on) VDS = -5 V, VGS = -10 V -15 A Drain Source On State Resistancea rDS( ) VGS = -10 V, ID = -3.9 A 0.062 0.080 W Drain-Source On-State Resistancea rDS(on) VGS = -4.5 V, ID = -3.0 A 0.105 0.135 W Forward Transconductancea gfs VDS = -15 V, ID = -2.5 A 5.0 S Diode Forward Voltagea VSD IS = -1.7 A, VGS = 0 V -0.82 -1.2 V Dynamicb Total Gate Charge Qg 5.8 8 Gate-Source Charge Qgs VDS = -10 V, VGS = -5 V, ID = -3.9 A 2 nC Gate-Drain Charge Qgd 1.9 Turn-On Delay Time td(on) 8 15 Rise Time tr VDD = -10 V, RL = 10 W 9 18 Turn-Off Delay Time td(off) VDD = -10 V, RL = 10 W ID ^ -1 A, VGEN = -10 V, RG = 6 W 21 40 ns Fall Time tf 10 20 Source-Drain Reverse Recovery Time trr IF = -1.7 A, di/dt = 100 A/ms 27 40 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 4 8 12 16 20 012 34 567 0 4 8 12 16 20 02468 VGS = 10 thru 6 V TC = -55_C 125_C 2 V 25_C Output Characteristics Transfer Characteristics VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) 4 V 3 V 5 V |
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