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SI4943DY Datasheet(PDF) 3 Page - Vishay Siliconix

Part No. SI4943DY
Description  Dual P-Channel 20-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4943DY Datasheet(HTML) 3 Page - Vishay Siliconix

  SI4943DY Datasheet HTML 1Page - Vishay Siliconix SI4943DY Datasheet HTML 2Page - Vishay Siliconix SI4943DY Datasheet HTML 3Page - Vishay Siliconix SI4943DY Datasheet HTML 4Page - Vishay Siliconix  
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Si4943DY
Vishay Siliconix
New Product
Document Number: 71682
S-21192—Rev. B, 29-Jul-02
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
500
1000
1500
2000
2500
3000
04
8
12
16
20
0.6
0.8
1.0
1.2
1.4
1.6
- 50
- 25
0
25
50
75
100
125
150
0
2
4
6
8
10
0
8
16
24
32
40
0.00
0.01
0.02
0.03
0.04
0.05
0
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
Coss
Ciss
VDS = 10 V
ID = 8.4 A
ID - Drain Current (A)
VGS = 10 V
ID = 8.4 A
VGS = 10 V
Gate Charge
On-Resistance vs. Drain Current
Qg - Total Gate Charge (nC)
Capacitance
On-Resistance vs. Junction Temperature
TJ - Junction Temperature (_C)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0
2468
10
TJ = 150_C
ID = 8.4 A
30
10
1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
TJ = 25_C
VGS = 4.5 V
Crss


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