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SI4943DY Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI4943DY
Description  Dual P-Channel 20-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4943DY Datasheet(HTML) 2 Page - Vishay Siliconix

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Si4943DY
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71682
S-21192—Rev. B, 29-Jul-02
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 mA
-1
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 16 V, VGS = 0 V
-1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = - 16 V, VGS = 0 V, TJ = 55_C
-5
mA
On-State Drain Currenta
ID(on)
VDS = - 5 V, VGS = - 10 V
-30
A
Drain Source On State Resistancea
rDS( )
VGS = - 10 V, ID = - 8.4 A
0.016
0.019
W
Drain-Source On-State Resistancea
rDS(on)
VGS = - 4.5 V, ID = - 6.7 A
0.025
0.030
W
Forward Transconductancea
gfs
VDS = - 10 V, ID = - 8.4 A
18
S
Diode Forward Voltagea
VSD
IS = - 1.7 A, VGS = 0 V
- 0.8
- 1.2
V
Dynamicb
Total Gate Charge
Qg
36
54
Gate-Source Charge
Qgs
VDS = - 10 V, VGS = - 10 V, ID = - 8.4 A
6.8
nC
Gate-Drain Charge
Qgd
5.0
Turn-On Delay Time
td(on)
11
17
Rise Time
tr
VDD = - 10 V, RL = 10 W
24
38
Turn-Off Delay Time
td(off)
VDD = - 10 V, RL = 10 W
ID ^ - 1 A, VGEN = - 10 V, RG = 6 W
56
85
ns
Fall Time
tf
30
45
Source-Drain Reverse Recovery Time
trr
IF = - 1.7 A, di/dt = 100 A/ms
50
80
Notes
a.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
6
12
18
24
30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
6
12
18
24
30
0
1234
5
VGS = 10 thru 5 V
TC = 125_C
-55
_C
25
_C
Output Characteristics
Transfer Characteristics
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
3 V
4 V


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