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SI4943DY Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI4943DY Datasheet(HTML) 2 Page - Vishay Siliconix |
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Si4943DY Vishay Siliconix New Product www.vishay.com 2 Document Number: 71682 S-21192—Rev. B, 29-Jul-02 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 mA -1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = - 16 V, VGS = 0 V -1 mA Zero Gate Voltage Drain Current IDSS VDS = - 16 V, VGS = 0 V, TJ = 55_C -5 mA On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 10 V -30 A Drain Source On State Resistancea rDS( ) VGS = - 10 V, ID = - 8.4 A 0.016 0.019 W Drain-Source On-State Resistancea rDS(on) VGS = - 4.5 V, ID = - 6.7 A 0.025 0.030 W Forward Transconductancea gfs VDS = - 10 V, ID = - 8.4 A 18 S Diode Forward Voltagea VSD IS = - 1.7 A, VGS = 0 V - 0.8 - 1.2 V Dynamicb Total Gate Charge Qg 36 54 Gate-Source Charge Qgs VDS = - 10 V, VGS = - 10 V, ID = - 8.4 A 6.8 nC Gate-Drain Charge Qgd 5.0 Turn-On Delay Time td(on) 11 17 Rise Time tr VDD = - 10 V, RL = 10 W 24 38 Turn-Off Delay Time td(off) VDD = - 10 V, RL = 10 W ID ^ - 1 A, VGEN = - 10 V, RG = 6 W 56 85 ns Fall Time tf 30 45 Source-Drain Reverse Recovery Time trr IF = - 1.7 A, di/dt = 100 A/ms 50 80 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 6 12 18 24 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 6 12 18 24 30 0 1234 5 VGS = 10 thru 5 V TC = 125_C -55 _C 25 _C Output Characteristics Transfer Characteristics VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) 3 V 4 V |
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