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SI4943DY Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SI4943DY
Description  Dual P-Channel 20-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4943DY Datasheet(HTML) 1 Page - Vishay Siliconix

  SI4943DY Datasheet HTML 1Page - Vishay Siliconix SI4943DY Datasheet HTML 2Page - Vishay Siliconix SI4943DY Datasheet HTML 3Page - Vishay Siliconix SI4943DY Datasheet HTML 4Page - Vishay Siliconix  
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FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Load Switching
- Computer
- Game Systems
D Battery Switching
- 2-Cell Li-lon
Si4943DY
Vishay Siliconix
New Product
Document Number: 71682
S-21192—Rev. B, 29-Jul-02
www.vishay.com
1
Dual P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
- 20
0.019 @ VGS = - 10 V
- 8.4
- 20
0.030 @ VGS = - 4.5 V
- 6.7
S1
D1
G1
D1
S2
D2
G2
D2
SO-8
5
6
7
8
Top View
2
3
4
1
S1
G1
D1 D1
P-Channel MOSFET
S2
G2
D2 D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
"20
V
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
ID
- 8.4
- 6.3
Continuous Drain Current (TJ = 150_C)a
TA = 70_C
ID
- 6.7
- 5.1
A
Pulsed Drain Current
IDM
-30
A
continuous Source Current (Diode Conduction)a
IS
- 1.7
- 0.9
Maximum Power Dissipationa
TA = 25_C
PD
2.0
1.1
W
Maximum Power Dissipationa
TA = 70_C
PD
1.3
0.7
W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Mi
J
ti
t A bi
ta
t
v 10 sec
R
45
62.5
Maximum Junction-to-Ambienta
Steady State
RthJA
85
110
_C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
26
35
C/W
Notes
a.
Surface Mounted on 1 ” x 1” FR4 Board.


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