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IDK05G65C5 Datasheet(PDF) 5 Page - Infineon Technologies AG |
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IDK05G65C5 Datasheet(HTML) 5 Page - Infineon Technologies AG |
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5 / 11 page  5 th Generation thinQ!TM SiC Schottky Diode IDK05G65C5 Electrical characteristics Final Data Sheet 5 Rev. 2.0, 2013-07-20 4 Electrical characteristics Table 5 Static characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. DC blocking voltage VDC 650 – – V IR= 0.83 mA, Tj=25°C Diode forward voltage VF – 1.5 1.8 IF= 5 A, Tj=25°C – 1.8 2.2 IF= 5 A, Tj=150°C Reverse current IR – 0.25 830 µA VR=650 V, Tj=25°C – 0.06 220 VR=600 V, Tj=25°C – 1 3200 VR=650 V, Tj=150°C Table 6 AC characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Total capacitive charge Qc – 8 nC VR=400 V, di/dt=200A/µs, IF≤IF,MAX, Tj=150°C. Total Capacitance C – 160 – pF VR=1 V, f=1 MHz – 20 – VR=300 V, f=1 MHz – 20 – VR=600 V, f=1 MHz |
Similar Part No. - IDK05G65C5_13 |
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Similar Description - IDK05G65C5_13 |
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