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MCR12D Datasheet(PDF) 2 Page - ON Semiconductor

Part No. MCR12D
Description  Silicon Controlled Rectifiers
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MCR12D Datasheet(HTML) 2 Page - ON Semiconductor

  MCR12D Datasheet HTML 1Page - ON Semiconductor MCR12D Datasheet HTML 2Page - ON Semiconductor MCR12D Datasheet HTML 3Page - ON Semiconductor MCR12D Datasheet HTML 4Page - ON Semiconductor MCR12D Datasheet HTML 5Page - ON Semiconductor MCR12D Datasheet HTML 6Page - ON Semiconductor MCR12D Datasheet HTML 7Page - ON Semiconductor MCR12D Datasheet HTML 8Page - ON Semiconductor  
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MCR12D, MCR12M, MCR12N
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance — Junction to Case
— Junction to Ambient
R
θJC
R
θJA
2.2
62.5
°C/W
Maximum Lead Temperature for Soldering Purposes 1/8
″ from Case for 10 Seconds
TL
260
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VD = Rated VDRM and VRRM; Gate Open)
TJ = 25°C
TJ = 125°C
IDRM,
IRRM
0.01
2.0
mA
ON CHARACTERISTICS
Peak Forward On–State Voltage* (ITM = 24 A)
VTM
2.2
Volts
Gate Trigger Current (Continuous dc) (VD = 12 V; RL = 100 Ω)
IGT
2.0
8.0
20
mA
Holding Current (VD = 12 V, Gate Open, Initiating Current = 200 mA)
IH
4.0
20
40
mA
Latch Current (VD = 12 V, IG = 20 mA)
IL
6.0
25
60
mA
Gate Trigger Voltage (Continuous dc) (VD = 12 V; RL =100 Ω)
VGT
0.5
0.65
1.0
Volts
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
dv/dt
100
250
V/
µs
Repetitive Critical Rate of Rise of On–State Current
IPK = 50 A, Pw = 40
µsec, diG/dt = 1 A/µsec, Igt = 50 mA
di/dt
50
A/
µs
*Indicates Pulse Test: Pulse Width
v2.0 ms, Duty Cycle v2%.


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