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MCR12D Datasheet(PDF) 1 Page - ON Semiconductor

Part No. MCR12D
Description  Silicon Controlled Rectifiers
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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MCR12D Datasheet(HTML) 1 Page - ON Semiconductor

   
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© Semiconductor Components Industries, LLC, 1999
December, 1999 – Rev. 2
1
Publication Order Number:
MCR12/D
MCR12D, MCR12M, MCR12N
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half–wave silicon gate–controlled devices are needed.
Blocking Voltage to 800 Volts
On–State Current Rating of 12 Amperes RMS at 80°C
High Surge Current Capability — 100 Amperes
Rugged, Economical TO220AB Package
Glass Passivated Junctions for Reliability and Uniformity
Minimum and Maximum Values of IGT, VGT an IH Specified for
Ease of Design
High Immunity to dv/dt — 100 V/µsec Minimum at 125°C
Device Marking: Logo, Device Type, e.g., MCR12D, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off–State Voltage(1)
(TJ = –40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
MCR12D
MCR12M
MCR12N
VDRM,
VRRM
400
600
800
Volts
On-State RMS Current
(180
° Conduction Angles; TC = 80°C)
IT(RMS)
12
A
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz,
TJ = 125°C)
ITSM
100
A
Circuit Fusing Consideration
(t = 8.33 ms)
I2t
41
A2sec
Forward Peak Gate Power
(Pulse Width
≤ 1.0 µs, TC = 80°C)
PGM
5.0
Watts
Forward Average Gate Power
(t = 8.3 ms, TC = 80°C)
PG(AV)
0.5
Watts
Forward Peak Gate Current
(Pulse Width
≤ 1.0 µs, TC = 80°C)
IGM
2.0
A
Operating Junction Temperature Range
TJ
– 40 to
+125
°C
Storage Temperature Range
Tstg
– 40 to
+150
°C
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage
ratings of the devices are exceeded.
SCRs
12 AMPERES RMS
400 thru 800 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MCR12D
TO220AB
50 Units/Rail
MCR12M
TO220AB
MCR12N
TO220AB
http://onsemi.com
50 Units/Rail
50 Units/Rail
K
G
A
TO–220AB
CASE 221A
STYLE 3
1
2
3
4
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
4
Anode


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