DFNWB3×2-8L-G

DFNWB3×2-8L-G Plastic-Encapsulate Transistors-MOSFETS

CJZM718 PNP Transistor and N-ch MOSFET

DESCRIPTIONS

The CJZM718 is Integrated a 20V N-ch MOSFET with low

on-state resistance, and an independently connected PNP transistor

with low collector-to-emitter saturation voltage. This device is

suitable for use in charging circuit and other power management.

FEATURES



High DC current gain



Low Threshold



Small package DFNWB3x2-8L-G



Including a CJP718 transistor and a CJ1012 MOSFET independently in a package

APPLICATIONS



Charging circuit



Other power management in portable equipments

MARKING:

front

back

℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

PNP Transistor

Collector-Base Voltage

-25

V

Collector-Emitter Voltage

-25

V

Emitter-Base Voltage

-7.5

V

Collector Current

-3

A

N-MOSFET

Drain-Source Voltage

20

V

Gate-Source Voltage

±6

V

Drain Current -Continuous

0.5

A

Drain Current - Pulse

2

A

Power Dissipation, Temperature and Thermal Resistance

Power Dissipation

1

W

Thermal Resistance from Junction to Ambient (note1)

175

℃/W

Thermal Resistance from Junction to Ambient (note2)

110

℃/W

Junction Temperature

150

℃

Storage Temperature

-55~+150

℃

1 of 5

sales@zpsemi.com

www.zpsemi.com

CJZM718