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IGCM06F60GA Datasheet(PDF) 10 Page - Infineon Technologies AG |
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IGCM06F60GA Datasheet(HTML) 10 Page - Infineon Technologies AG |
10 / 17 page Datasheet 10 <Revision 2.7> <2016-08-01> Control Integrated POwer System (CIPOS™) IGCM06F60GA Dynamic Parameters (VDD= 15V and TJ = 25°C, if not stated otherwise) Description Condition Symbol Value Unit min typ max Turn-on propagation delay time VLIN,HIN= 5V, IC = 4A, VDC= 300V ton - 650 - ns Turn-on rise time tr - 20 - ns Turn-on switching time tc(on) - 100 - ns Reverse recovery time trr - 130 - ns Turn-off propagation delay time VLIN,HIN= 0V, IC = 4A, VDC= 300V toff - 680 - ns Turn-off fall time tf - 180 - ns Turn-off switching time tc(off) - 220 - ns Short circuit propagation delay time From VIT,TH+ to 10% ISC tSCP - 1420 - ns Input filter time ITRIP VITRIP = 1V tITRIPmin - 530 - ns Input filter time at LIN, HIN for turn on and off VLIN,HIN= 0V & 5V tFILIN - 290 - ns Fault clear time after ITRIP-fault VITRIP = 1V tFLTCLR 40 65 200 µs Deadtime between low side and high side DTPWM 1.0 - - µs Deadtime of gate drive circuit DTIC - 380 - ns IGBT turn-on energy (includes reverse recovery of diode) VDC= 300V, IC = 4A TJ = 25°C 150°C Eon - - 75 130 - - µJ IGBT turn-off energy VDC= 300V, IC = 4A TJ = 25°C 150°C Eoff - - 120 190 - - µJ Diode recovery energy VDC= 300V, IC = 4A TJ = 25°C 150°C Erec - - 40 70 - - µJ Bootstrap Parameters (TJ = 25°C, if not stated otherwise) Description Condition Symbol Value Unit min typ max Repetitive peak reverse voltage VRRM 600 - - V Bootstrap diode resistance of U-phase1 VS2 or VS3 = 300V, TJ = 25°C VS2 and VS3 = 0V, TJ = 25°C VS2 or VS3 = 300V, TJ = 125°C VS2 and VS3 = 0V, TJ = 125°C RBS1 - 35 40 50 65 - Ω Reverse recovery time IF= 0.6A, di/dt = 80A/µs trr_BS - 50 - ns Forward voltage drop IF= 20mA, VS2 and VS3 = 0V VF_BS - 2.6 - V 1 RBS2 and RBS3have same values to RBS1. |
Similar Part No. - IGCM06F60GA_16 |
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Similar Description - IGCM06F60GA_16 |
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