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2SC4001 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC4001 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page  INCHANGE Semiconductor isc Product Specification 2 isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC4001 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT ICBO Collector Cutoff Current VCB= 200V; IE= 0 100 nA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 100 nA hFE DC Current Gain IC= 10m A ; VCE=10V 60 300 VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA ;IB=1mA 0.3 V VBE(sat) Base-Emitter Saturation Voltage IC= 10mA ;IB= 1mA 1.2 V fT Current-Gain—Bandwidth Product IE= 30mA ; VCE= 30V 200 MHz COB Output Capacitance IE= 0 ; VCB= 30V;ftest= 1.0MHz 3.5 pF hFE Classifications M L K 60-120 100-200 160-300 |
Similar Part No. - 2SC4001 |
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