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IXFH40N30Q Datasheet(PDF) 1 Page - IXYS Corporation

Part No. IXFH40N30Q
Description  HiPerFET Power MOSFETs Q-Class
Download  2 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFH40N30Q Datasheet(HTML) 1 Page - IXYS Corporation

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© 2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°C to 150°C
300
V
V
DGR
T
J
= 25
°C to 150°C; R
GS = 1 MW
300
V
V
GS
Continuous
±20
V
V
GSM
Transient
±30
V
I
D25
T
C
= 25
°C40
A
I
DM
T
C
= 25
°C, pulse width limited by T
JM
160
A
I
AR
T
C
= 25
°C40
A
E
AR
T
C
= 25
°C30
mJ
E
AS
T
C
= 25
°C
1.0
J
dv/dt
I
S
£ I
DM, di/dt £ 100 A/ms, VDD £ VDSS,
5
V/ns
T
J
£ 150°C, R
G = 2 W
P
D
T
C
= 25
°C
300
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
°C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-247
6
g
TO-268
4
g
TO-247 AD (IXFH)
G = Gate
D = Drain
S = Source
TAB = Drain
(TAB)
98504A (6/99)
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
Min.
Typ.
Max.
V
DSS
V
GS = 0 V, ID = 250 mA
300
V
V
GS(th)
V
DS
= V
GS, ID = 4 mA
2.0
4
V
I
GSS
V
GS = ±20 VDC, VDS = 0
±100
nA
I
DSS
V
DS
= V
DSS
T
J =
25
°C25
mA
V
GS = 0 V
T
J = 125°C1
mA
R
DS(on)
V
GS = 10 V, ID = 0.5 ID25
80
m
W
Pulse test, t
£ 300 ms, duty cycle d £ 2 %
Preliminary data sheet
TO-268 (IXFT) Case Style
(TAB)
G
S
HiPerFETTM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
g
V
DSS
= 300
V
I
D25
=
40
A
R
DS(on)
=
80 m
W
t
rr
£ 250 ns
IXFH 40N30Q
IXFT 40N30Q
IXYS reserves the right to change limits, test conditions, and dimensions.
Features
• IXYS advanced low Q
g process
• International standard packages
• Low gate charge and capacitance
- easier to drive
- faster switching
• Low R
DS (on)
• Unclamped Inductive Switching (UIS)
rated
• Molding epoxies meet UL 94 V-0
flammability classification
Advantages
• Easy to mount
• Space savings
• High power density


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