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IXFH9N80Q Datasheet(PDF) 2 Page - IXYS Corporation

Part No. IXFH9N80Q
Description  HiPerFET Power MOSFETs Q-Class
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFH9N80Q Datasheet(HTML) 2 Page - IXYS Corporation

  IXFH9N80Q Datasheet HTML 1Page - IXYS Corporation IXFH9N80Q Datasheet HTML 2Page - IXYS Corporation  
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IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D = 0.5 • ID25, pulse test
3
5
S
C
iss
2200
pF
C
oss
V
GS
= 0 V, V
DS = 25 V, f = 1 MHz
240
pF
C
rss
41
pF
t
d(on)
20
n s
t
r
V
GS
= 10 V, V
DS = 0.5 • VDSS, ID = 0.5 • ID25
20
n s
t
d(off)
R
G = 4.7 Ω (External),
42
n s
t
f
13
n s
Q
g(on)
56
nC
Q
gs
V
GS
= 10 V, V
DS = 0.5 • VDSS, ID = 0.5 • ID25
17
nC
Q
gd
22
nC
R
thJC
0.7
K/W
R
thCK
(TO-247)
0.25
K/W
Source-Drain Diode
Characteristic Values
(T
J = 25°C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
9
A
I
SM
Repetitive; pulse width limited by T
JM
36
A
V
SD
I
F = IS, VGS = 0 V,
1.5
V
Pulse test, t
≤ 300 µs, duty cycle d ≤ 2 %
t
rr
250
n s
Q
RM
I
F = IS, -di/dt = 100 A/µs, VR = 100 V
0.75
µC
I
RM
7.5
A
TO-268 Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205
0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
∅P3.55
3.65
.140
.144
Q
5.89
6.40
0.232
0.252
R
4.32
5.49
.170
.216
S
6.15
BSC
242
BSC
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
1
2
3
TO-247 AD (IXFH) Outline
Terminals: 1 - Gate
2 - Drain
3 - Source
Tab - Drain
IXFH
9N80Q
IXFT
9N80Q


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