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GM71C17400C Datasheet(PDF) 3 Page - Hynix Semiconductor

Part No. GM71C17400C
Description  4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
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Maker  HYNIX [Hynix Semiconductor]
Homepage  http://www.skhynix.com/ko/index.jsp
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GM71C17400C Datasheet(HTML) 3 Page - Hynix Semiconductor

 
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GM71C(S)17400C/CL
Rev 0.1 / Apr’01
DC Electrical Characteristics (VCC = 5.0V+/-10%, Vss = 0V, TA = 0 ~ 70C)
Symbol
Parameter
Note
VOH
VOL
Output Level
Output "H" Level Voltage (IOUT = -5mA)
Unit
Max
VCC
0.4
Min
2.4
0
Output Level
Output "L" Level Voltage (IOUT = 4.2mA)
ICC1
Operating Current
Average Power Supply Operating Current
(RAS, CAS Cycling : tRC = tRC min)
ICC2
Standby Current (TTL)
Power Supply Standby Current
(RAS, CAS = VIH, DOUT = High-Z)
ICC3
RAS Only Refresh Current
Average Power Supply Current
RAS Only Refresh Mode
(tRC = tRC min)
ICC4
ICC5
Standby Current (CMOS)
Power Supply Standby Current
(RAS, CAS >= VCC - 0.2V, DOUT = High-Z)
1
-
ICC6
CAS-before-RAS Refresh Current
(tRC = tRC min)
150
-
ICC8
IL(I)
10
-10
IL(O)
10
-10
Input Leakage Current
Any Input (0V<=VIN<= 6V)
Output Leakage Current
(DOUT is Disabled, 0V<=VOUT<= 6V)
Note: 1. ICC depends on output load condition when the device is selected.
ICC(max) is specified at the output open condition.
2. Address can be changed once or less while RAS = VIL.
3. Address can be changed once or less while CAS = VIH.
4. L-version.
Fast Page Mode Current
Average Power Supply Current
Fast Page Mode
(tPC = tPC min)
2
-
100
-
50ns
60ns
70ns
90
80
-
-
-
100
-
50ns
60ns
70ns
90
80
-
-
90
-
50ns
60ns
70ns
80
70
-
V
V
mA
uA
uA
ICC7
-
5
Standby Current RAS = VIH
CAS = VIL
DOUT = Enable
1
mA
Battery Backup Operating Current(Standby with CBR Refresh)
(CBR refresh, tRC=62.5us, tRAS<=0.3us,
DOUT=High-Z, CMOS interface)
350
-
uA
4
uA
4
mA
mA
1, 2
mA
2
mA
1, 3
mA
-
100
-
50ns
60ns
70ns
90
80
-


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