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ITS4300S-SJ-D Datasheet(PDF) 15 Page - Infineon Technologies AG

Part No. ITS4300S-SJ-D
Description  Smart High-Side NMOS-Power Switch
Download  22 Pages
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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ITS4300S-SJ-D Datasheet(HTML) 15 Page - Infineon Technologies AG

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Data Sheet
15
Rev 1.0, 2012-09-01
ITS4300S-SJ-D
Application Information
7
Application Information
7.1
Application Diagram
The following information is given as a hint for the implementation of the device only and shall not be regarded as
a description or warranty for a certain functionality, condition or quality of the device.
Figure 4
Application Diagram
The ITS4300S-SJ-D can be connected directly to a supply network. It is recommended to place a ceramic
capacitor (e.g. CS = 220nF) between supply and GND to avoid line disturbances. Wire harness inductors/resistors
are sketched in the application circuit above.
The complex load (resistive, capacitive or inductive) must be connected to the output pin OUT.
A built-in current limit protects the device against destruction.
The ITS4300S-SJ-D can be switched on and off with standard logic ground related logic signal at pin IN.
In standby mode (IN=L) the ITS4300S-SJ-D is deactivated with very low current consumption.
The output voltage slope is controlled during on and off transistion to minimize emissions. Only a small ceramic
capacitor COUT=1nF is recommended to attenuate RF noise.
In the following chapters the main features, some typical waverforms and the protection behaviour
of the ITS4300S-SJ-D is shown. For further details please refer to application notes on the Infineon homepage.
Wire
Harness
Complex
LOAD
Electronic Control Unit
Wire
Harness
GND1
3
ITS4300S-SJ-D
4
Gate
Control
Circuit
7
Temperature
Sensor
IN
OUT
VS
6
5
8
Bias
Supervision
Overvoltage
Protection
ESD
Protection
Logic
Current
Limiter
2
1
ST
GND
CS
220nF
GND2
GND3
COUT
1nF


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