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ITS4300S-SJ-D Datasheet(PDF) 8 Page - Infineon Technologies AG

Part No. ITS4300S-SJ-D
Description  Smart High-Side NMOS-Power Switch
Download  22 Pages
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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ITS4300S-SJ-D Datasheet(HTML) 8 Page - Infineon Technologies AG

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Data Sheet
8
Rev 1.0, 2012-09-01
ITS4300S-SJ-D
Electrical Characteristics
Repetitive short circuit current limit
T
j = TjTrip ; see timing diagrams
I
LSCR
1A
V
IN = 5.0V
5.0.17
Output clamp at
V
OUT = VS - VDSCL
(inductive load switch off)
V
DSCL
41
47
V
I
S = 4mA
5.0.18
Overvoltage protection
V
OUT = VS - VONCL
V
SAZ
41
V
I
S = 4mA
5.0.19
Thermal overload
trip temperature
T
jTrip
150
°C
5.0.20
Thermal hysteresis
T
HYS
10
K
5.0.21
Reverse Battery4)
Continuous reverse battery voltage
V
SREV
- 32
V
5.0.22
Forward voltage of the drain-source
reverse diode
V
FDS
600
mV
I
FDS =200mA;
V
IN= 0V; Tj = 125°C
5.0.23
Input interface; pin IN
Input turn-ON threshold voltage
V
INON
2.2
V
5.0.24
Input turn-OFF threshold voltage
V
INOFF
0.8
V
5.0.25
Input threshold hysteresis
V
INHYS
0.3
V
5.0.26
Off state input current
I
INOFF
130
µA
V
IN = 0.7V
5.0.27
On state input current
I
INON
130
µA
V
IN = 5.0V
5.0.28
Input resistance
R
IN
1.5
3.5
5.0
kΩ
5.0.29
Status output (NMOS open drain); pin ST
Status output zener voltage
V
STZ
5.4
6.1
6.8
V
I
ST = 1.6mA
5.0.30
Status output low voltage
V
STLO
0.4
V
I
ST =1.6mA
T
j < 25°C
5.0.31
Status output low voltage
V
STLO
0.6
V
I
ST =1.6mA
T
j < 125°C
5.0.32
Status leakage current
I
STLK
2µA
V
ST =5V
T
j < 105°C
5.0.33
Status invalid time after positive
input slope5)
t
dP
300
600
µs
V
S = 20V
5.0.34
Diagnostic characteristics
Short circuit detection voltage
V
OUTSC
2.8
V
5.0.35
Open load detection voltage6)
V
OUTOL
3
V
5.0.36
Open load detection current7)
(included in standby current)
I
OUTOL
5µA
V
OUT =4V
5.0.37
1) Device on 50mm x 50mm x 1,5mm epoxy FR4 PCB with 6cm² (one layer copper 70um thick) copper area for supply voltage
connection. PCB in vertical position without blown air.
2) Timing values only with high slewrate input signal; otherwise slower.
3) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet.
Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous
repetitive operation.
Table 4
VS=13.5V; Tj = -40°C to 125°C; all voltages with respect to ground. Currents flowing into the
device unless otherwise specified in chapter “Block Diagram and Terms”. Typical values at
Vs = 13.5V, Tj = 25°C
Parameter
Symbol
Values
Unit
Note /
Test Condition
Number
Min.
Typ.
Max.


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