BC847BDW1T1G datasheet(4/6 Pages) ONSEMI

Part #	BC847BDW1T1G

Description	Dual General Purpose Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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BC846BDW1T1, BC847BDW1T1, BC848CDW1T1

http://onsemi.com

4

TYPICAL CHARACTERISTICS − BC846

Figure 7. Normalized DC Current Gain

IC, COLLECTOR CURRENT (mA)

Figure 8. “On” Voltage

IC, COLLECTOR CURRENT (mA)

0.8

1.0

0.6

0.2

0.4

1.0

2.0

0.1

1.0

10

100

0.2

0.5

0.2

1.0

10

200

TA = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = 5.0 V

Figure 9. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 10. Base−Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

−1.0

1.2

1.6

2.0

0.02

1.0

10

0

20

0.1

0.4

0.8

0.2

2.0

10

200

1.0

TA = 25°C

200 mA

50 mA

IC =

10 mA

VCE = 5 V

TA = 25°C

0

0.5

2.0

5.0

20

50

100

0.05

0.2

0.5

2.0

5.0

100 mA

20 mA

−1.4

−1.8

−2.2

−2.6

−3.0

0.5

5.0

20

50

100

−55°C to 125°C

qVB for VBE

Figure 11. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

40

Figure 12. Current−Gain − Bandwidth Product

IC, COLLECTOR CURRENT (mA)

0.1

0.2

1.0

50

2.0

10

100

200

500

50

20

10

6.0

4.0

1.0

10

50 100

5.0

VCE = 5 V

TA = 25°C

0.5

5.0

20

TA = 25°C

Cob

Cib

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