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BAS40L Datasheet(PDF) 3 Page - NXP Semiconductors |
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BAS40L Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page  2003 May 20 3 Philips Semiconductors Product specification Schottky barrier diode BAS40L ELECTRICAL CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulse test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS Note 1. Refer to SOD882 standard mounting conditions (footprint), FR4 with 60 µm copper strip line. Soldering Reflow soldering is the only recommended soldering method. SYMBOL PARAMETER CONDITIONS MAX. UNIT VF continuous forward voltage see Fig.2 IF = 1 mA 380 mV IF = 10 mA 500 mV IF =40mA 1 V IR continuous reverse current VR = 30 V; see Fig.3; note 1 1 µA VR = 40 V; see Fig.3; note 1 10 µA Cd diode capacitance VR = 0 V; f = 1 MHz; see Fig.5 5 pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 500 K/W |
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Similar Description - BAS40L |
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