2003 May 20

2

Philips Semiconductors

Product specification

Schottky barrier diode

BAS40L

FEATURES

• Low diode capacitance

• Low forward voltage

• Guard ring protected

• High breakdown voltage

• Leadless ultra small plastic package

(1 mm

× 0.6 mm × 0.5 mm)

• Power dissipation comparable to SOT23.

APPLICATIONS

• Ultra high-speed switching

• Voltage clamping

• Protection circuits

• Mobile communication, digital (still) cameras, PDAs and

PCMCIA cards.

DESCRIPTION

Planar Schottky barrier diode with an integrated guard ring

for stress protection. Encapsulated in a SOD882 leadless

ultra small plastic package.

handbook, halfpage

MDB391

Bottom view

Fig.1 Simplified outline (SOD882) and symbol.

Marking code: S6.

The marking bar indicates the cathode.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per diode

continuous reverse voltage

−

40

V

continuous forward current

−

120

mA

repetitive peak forward current

−

120

mA

non-repetitive peak forward current

−

200

mA

storage temperature

−65

+150

°C

junction temperature

−

150

°C