DMC2990UDJQ-7B datasheet(7/9 Pages) DIODES

Part #	DMC2990UDJQ-7B

Description	COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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7 / 9 page

DMC2990UDJQ

Document number: DS39168 Rev. 1 - 2

7 of 9

www.diodes.com

September 2016

DMC2990UDJQ

Typical Characteristics - P-CHANNEL (Cont.)

0

0.2

0.4

0.6

0.8

1.0

1.2

-50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE( C)

Fig. 19 Gate Threshold Variation vs. Ambient Temperature

J



I = -250礎

D

I = -1mA

D

0

0.2

0.4

0.6

0.8

0.4

0.6

0.8

1.0

1.2

T = 25癈

A

V

, SOURCE- DRAIN VOLTAGE (V)

Fig. 20 Diodes Forward Voltage vs. Current

SD

V

, DRAIN-SOURCE VOLTAGE (V)

Fig. 21 Typical Junction Capacitance

DS

f = 1MHz

C

iss

Coss

Crss

0

10

20

30

40

50

0

2

4

6

8

10

Q , TOTAL GATE CHARGE (nC)

Fig. 23 Gate Charge Characteristics

G

0

1

2

3

4

5

0

2

4

6

8

10

12

14

16

18

V

= 10V, I = -4.5A

DS

D

1

10

100

1,000

0

4

6

8

10

12

14

16

18

20

-V

, DRAIN-SOURCE VOLTAGE (V)

Fig. 22 Typical Leakage Current vs.

Drain-Source Voltage

DS

-I

,

L

E

A

K

A

G

E

C

U

R

E

N

T

(

n

A

)

D

S

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = -25°C

A

2

0.1

1

10

100

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 24 SOA, Safe Operation Area

P = 10s

W

P

= DC

W

P =1s

W

P

=100ms

W

I

,

D

R

A

I

N

C

U

R

E

N

T

(

A

)

D

T

= 150

°C

T = 25

°C

Single Pulse

J(MAX)

A

R

Limited

DS(ON)

P =1ms

W

P =100µs

W

0.001

0.01

0.1

1

10

P =10µs

W

P

= 10ms

W

-

A

°C

g,

-

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