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NCS20082DTBR2G Datasheet(PDF) 5 Page - ON Semiconductor |
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NCS20082DTBR2G Datasheet(HTML) 5 Page - ON Semiconductor |
5 / 20 page NCS20081, NCV20081, NCS20082, NCV20082, NCS20084, NCV20084 www.onsemi.com 5 ELECTRICAL CHARACTERISTICS AT VS = 1.8 V TA = 25°C; RL ≥ 10 kW; VCM = VOUT = mid−supply unless otherwise noted. Boldface limits apply over the specified temperature range, TA = −40°C to 125°C. (Note 8) Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Input Offset Voltage VOS 0.5 3.5 mV 4 mV Offset Voltage Drift DVOS/DT 1 mV/°C Input Bias Current (Note 8) IIB 1 pA 1500 pA Input Offset Current (Note 8) IOS 1 pA 1100 pA Channel Separation XTLK DC 125 dB Differential Input Resistance RID 10 G W Common Mode Input Resistance RIN 10 G W Differential Input Capacitance CID 1 pF Common Mode Input Capacitance CCM 5 pF Common Mode Rejection Ratio CMRR VCM = VSS – 0.2 to VDD + 0.2 48 73 dB VCM = VSS + 0.2 to VDD − 0.2 45 OUTPUT CHARACTERISTICS Open Loop Voltage Gain AVOL 86 120 dB 80 Short Circuit Current ISC Output to positive rail, sinking current 15 mA Output to negative rail, sourcing current 11 Output Voltage High VOH Voltage output swing from positive rail 3 19 mV 20 Output Voltage Low VOL Voltage output swing from negative rail 3 19 mV 20 AC CHARACTERISTICS Unity Gain Bandwidth UGBW 1.2 MHz Slew Rate at Unity Gain SR VID = 1.2 Vpp, Gain = 1 0.4 V/ ms Phase Margin ym 60 ° Gain Margin Am 19 dB Settling Time tS VIN = 1.2 Vpp, Gain = 1 Settling time to 0.1% 5 ms Settling time to 0.01% 6 Open Loop Output Impedance ZOL f = 100 Hz 0.8 W NOISE CHARACTERISTICS Total Harmonic Distortion plus Noise THD+N VIN = 1.2 Vpp, f = 1 kHz, Av = 1 0.005 % Input Referred Voltage Noise en f = 1 kHz 30 nV/ √Hz f = 10 kHz 24 Input Referred Current Noise in f = 1 kHz 300 fA/ √Hz SUPPLY CHARACTERISTICS Power Supply Rejection Ratio PSRR No Load 67 90 dB 64 Power Supply Quiescent Current IDD Per channel, no load 42 60 mA 8. Performance guaranteed over the indicated operating temperature range by design and/or characterization. |
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