NCP4641

www.onsemi.com

3

ABSOLUTE MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Input Voltage

−0.3 to 50

V

Peak Input Voltage (Note 1)

60

V

Output Voltage

V

Chip Enable Input

V

Output Current

250

mA

Power Dissipation SOT−89

900

mW

Power Dissipation SOIC6−TL

1700

Junction Temperature

−40 to 150

°C

Storage Temperature

−55 to 125

°C

ESD Capability, Human Body Model (Note 2)

2000

V

ESD Capability, Machine Model (Note 2)

200

V

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. Duration time = 200 ms

2. This device series incorporates ESD protection and is tested by the following methods:

ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114)

ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115)

Latchup Current Maximum Rating tested per JEDEC standard: JESD78.

THERMAL CHARACTERISTICS

Rating

Symbol

Value

Unit

Thermal Characteristics, SOT−89

Thermal Resistance, Junction−to−Air

111

°C/W

Thermal Characteristics, SOIC6−TL

Thermal Resistance, Junction−to−Air

59

°C/W