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CJP05N60 Datasheet(PDF) 2 Page - ZP Semiconductor |
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CJP05N60 Datasheet(HTML) 2 Page - ZP Semiconductor |
2 / 3 page Electrical characteristics (Ta=25 ℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units Drain-Source Breakdown Voltage V(BR) DSS VGS = 0V, ID =250µA 600 Gate-Threshold Voltage VGS(th) VDS =VGS, ID =250µA 2.0 4.0 V Gate-Body Leakage Current (note 4) IGSS VDS =0V, VGS =±30V ±100 nA Zero Gate Voltage Drain Current IDSS VDS =600V, VGS =0V 1 µA Drain-Source On-State Resistance RDS(on) VGS =10V, ID =2.25A 2.5 Ω Input Capacitance Ciss 670 Output Capacitance Coss 72 Reverse Transfer Capacitance Crss VDS =25V,VGS =0V, f =1MHz 8.5 pF Turn-On Delay Time (note 4) td(on) 30 Rise Time (note 4) tr 90 Turn-Off Delay Time (note 4) td(off) 85 Fall Time (note 4) tf VDD=300V,ID=4.5A, RG=25Ω 100 ns Forward on Voltage (note 4) VSD VGS =0V, IS=4.5A 1.4 V Notes: 1. EAS condition: Tj=25 ℃ , VDD=50V,RG=25Ω,L=16mH,IAS=5A 2. This test is performed with no heat sink at Ta=25 ℃. 3. This test is performed with infinite heat sink at Tc=25 ℃. 4. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤2%. Forward transconductance gfs VDS = 40V, ID =2.25A 2.9 S 2 of 3 sales@zpsemi.com www.zpsemi.com CJP05N60 |
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