CJP05N60 datasheet(2/3 Pages) ZPSEMI

Part #	CJP05N60

Description	N-Channel Power MOSFET

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Manufacturer	ZPSEMI [ZP Semiconductor]

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Electrical characteristics (Ta=25

℃ unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Units

Drain-Source Breakdown Voltage

V(BR) DSS

VGS = 0V, ID =250µA

600

Gate-Threshold Voltage

VGS(th)

VDS =VGS, ID =250µA

2.0

4.0

V

Gate-Body Leakage Current (note 4)

IGSS

VDS =0V, VGS =±30V

±100

nA

Zero Gate Voltage Drain Current

IDSS

VDS =600V, VGS =0V

1

µA

Drain-Source On-State Resistance

RDS(on)

VGS =10V, ID =2.25A

2.5

Ω

Input Capacitance

Ciss

670

Output Capacitance

Coss

72

Reverse Transfer Capacitance

Crss

VDS =25V,VGS =0V,

f =1MHz

8.5

pF

Turn-On Delay Time (note 4)

td(on)

30

Rise Time (note 4)

tr

90

Turn-Off Delay Time (note 4)

td(off)

85

Fall Time (note 4)

tf

VDD=300V,ID=4.5A,

RG=25Ω

100

ns

Forward on Voltage (note 4)

VSD

VGS =0V, IS=4.5A

1.4

V

Notes:

1.

EAS condition: Tj=25

℃ , VDD=50V,RG=25Ω,L=16mH,IAS=5A

2.

This test is performed with no heat sink at Ta=25

℃.

3.

This test is performed with infinite heat sink at Tc=25

℃.

4.

Pulse Test : Pulse Width≤300µs, Duty Cycle ≤2%.

Forward transconductance

gfs

VDS =

40V, ID =2.25A

2.9

S

2 of 3

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