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3N55-220 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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3N55-220 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor 3N55 · ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=250µA 550 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA 2.0 4.5 V VSD Diode Forward On-voltage IS= 3A ;VGS= 0 1.4 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 1.5A 2.5 Ω IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 ± 100 nA IDSS Zero Gate Voltage Drain Current VDS=550V; VGS= 0 10 µA tr Rise Time VGS=10V; ID=1.5A; VDD=25V; RL=50Ω 100 ns td(on) Turn-on Delay Time 50 tf Fall Time 80 td(off) Turn-off Delay Time 180 · |
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