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SUP75N06-07L Datasheet(PDF) 2 Page - Vishay Siliconix |
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SUP75N06-07L Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 4 page SUP/SUB75N06-07L Vishay Siliconix www.vishay.com 2-2 Document Number: 70776 S-05111—Rev. F, 10-Dec-00 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1.0 3.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA VDS = 60 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, TJ = 125_C 50 mA DSS VDS = 60 V, VGS = 0 V, TJ = 175_C 250 m On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V 120 A VGS = 10 V, ID = 30 A 0.0061 0.0075 a VGS = 4.5 V, ID = 20A 0.0071 0.0085 W Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 30 A, TJ = 125_C 0.012 W VGS = 10 V, ID = 30 A, TJ = 175_C 0.015 Forward Transconductancea gfs VDS = 15 V, ID = 30 A 30 S Dynamicb Input Capacitance Ciss 6300 Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 920 pF Reverse Transfer Capacitance Crss 350 Total Gate Chargec Qg 75 120 Gate-Source Chargec Qgs VDS = 30 V, VGS = 10 V, ID = 75 A 18 nC Gate-Drain Chargec Qgd DS , GS D 27 Turn-On Delay Timec td(on) 14 40 Rise Timec tr VDD = 30 V, RL = 0.47 W 15 40 Turn-Off Delay Timec td(off) VDD = 30 V, RL = 0.47 W ID ^ 75 A, VGEN = 10 V, RG = 2.5 W 150 300 ns Fall Timec tf 50 100 Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current IS 75 Pulsed Current ISM 240 A Forward Voltagea VSD IF = 75 A , VGS = 0 V 1.0 1.3 V Reverse Recovery Time trr 67 120 ns Peak Reverse Recovery Current IRM(REC) IF = 75 A, di/dt = 100 A/ms 6 8 A Reverse Recovery Charge Qrr F m 0.2 0.48 mC Notes a. Pulse test: pulse width v 300 msec, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. |
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