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SUM110N06-04L Datasheet(PDF) 2 Page - Vishay Siliconix |
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SUM110N06-04L Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page SUM110N06-04L Vishay Siliconix New Product www.vishay.com 2 Document Number: 71704 S-20417—Rev. B, 08-Apr-02 SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 mA 60 Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1 3 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA VDS = 48 V, VGS = 0 V 1 m Zero Gate Voltage Drain Current IDSS VDS = 48 V, VGS = 0 V, TJ = 125_C 50 mA DSS VDS = 48 V, VGS = 0 V, TJ = 200_C 10 mA On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 120 A VGS = 10 V, ID = 30 A 0.0028 0.0035 a VGS = 4.5 V, ID = 20 A 0.004 0.005 W Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 30 A, TJ = 125_C 0.0058 W VGS = 10 V, ID = 30 A, TJ = 200_C 0.0088 Forward Transconductancea gfs VDS = 15 V, ID = 30 A 30 S Dynamicb Input Capacitance Ciss 7500 Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1050 pF Reverse Transfer Capacitance Crss 700 Total Gate Chargec Qg 150 220 Gate-Source Chargec Qgs VDS = 30 V, VGS = 10 V, ID = 110 A 25 nC Gate-Drain Chargec Qgd DS GS D 45 Turn-On Delay Timec td(on) 20 30 Rise Timec tr VDD = 30 V, RL = 0.4 W 135 200 Turn-Off Delay Timec td(off) VDD = 30 V, RL = 0.4 W ID ^ 110 A, VGEN = 10 V, RG = 2.5 W 80 120 ns Fall Timec tf 150 220 Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current IS 110 Pulsed Current ISM 440 A Forward Voltagea VSD IF = 110 A, VGS = 0 V 1.1 1.4 V Reverse Recovery Time trr 75 120 ns Peak Reverse Recovery Current IRM(REC) IF = 110 A, di/dt = 100 A/ms 2.5 5 A Reverse Recovery Charge Qrr 0.09 0.25 mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. |
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