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SUD25N06-45L Datasheet(PDF) 1 Page - Vishay Siliconix |
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SUD25N06-45L Datasheet(HTML) 1 Page - Vishay Siliconix |
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SUD25N06-45L Vishay Siliconix Document Number: 70274 S-57253—Rev. E, 24-Feb-98 www.vishay.com S FaxBack 408-970-5600 2-1 N-Channel 60-V (D-S), 175 _C MOSFET, Logic Level PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 60 0.035 @ VGS = 10 V 25 60 0.045 @ VGS = 4.5 V 22 TO-252 S GD Top View Drain Connected to Tab Order Number: SUD25N06-45L D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS "20 V Continuous Drain Current (TJ = 175_C) TC = 25_C ID 25 A Continuous Drain Current (TJ = 175_C) TC = 100_C ID 16 A Pulsed Drain Current IDM 30 A Continuous Source Current (Diode Conduction) IS 25 Avalanche Current IAR 25 Repetitive Avalanche Energy (Duty Cycle v 1%) L = 0.1 mH EAR 31 mJ Maximum Power Dissipation TC = 25_C PD 50 W Maximum Power Dissipation TA = 25_C PD 2.5a W Operating Junction and Storage Temperature Range TJ, Tstg –55 to 175 _C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit Maximum Junction-to-Ambienta RthJA 60 _C/W Maximum Junction-to-Case RthJC 3.0 _C/W Notes: a. Surface mounted on 1” x 1” FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm |
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